United Silicon Carbide Inc

United Silicon Carbide, Inc is a manufacturer of semiconductors specializing in silicon carbide and diode power semiconductors for customers throughout New Jersey.

SiC Schottky Diodes and JFETs are providing industry-changing levels of power efficiency in key markets that foster a greener economy, such as electric vehicle charging. Their superior switching performance improves charging time and range for electric vehicles; their radiation-tolerant, extreme temperature capable electronics are vital for planned NASA missions such as exploring Venus in situ or carrying out long duration Europa-Jupiter missions.

Company Overview

United Silicon Carbide manufactures silicon carbide (SiC) power semiconductor devices such as FETs, JFETs and Schottky diodes for customers throughout New Jersey. The Company currently services customers who demand SiC FETs as FET FETs/JFETs or Schottky diode devices.

Rutgers University spin-out USCI provides designers with tools that improve power efficiency in key markets that drive green economies. Their products improve performance and reliability in EV chargers, DC-DC converters and traction drives; enable cost reductions in data centers; provide extended lifespan with higher efficiency ratings for solar photovoltaic (PV) inverters – among many other applications.

USCI’s fourth-generation SiC FETs boast a maximum operating voltage of 750 V and low RDS(on) resistance of 5.9 milliohms, providing multiple industries with increased efficiency while decreasing system costs. Utilizing their unique cascode configuration, their high-speed SiC FETs combine fast switching speed with ultra-low on resistance for higher voltage levels in smaller packages for increased power density applications.

Qorvo successfully acquired United Silicon Carbide on November 3, 2021. Investors include Qorvo, Paycheck Protection Program, GHO Ventures and JumpStart NJ Angel Network as investors in United Silicon Carbide.

United Silicon Carbide is making waves in the electric vehicle industry with their breakthrough SiC power semiconductor technology, revolutionizing it from university research to mass market adoption. Chrissie Gagliardi discusses her experience of taking cutting-edge materials technology from university lab to mass market, as well as her plans to continue expanding their business and impacting society positively.

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Products & Services

United Silicon Carbide manufactures semiconductor devices. This company specializes in silicon carbide and diode power semiconductors and services customers throughout New Jersey.

Silicon carbide (SiC) is a hard chemical compound composed of silicon and carbon. The latter typically takes the form of coal-derived black graphite or naturally occurring moissanite mineral deposits. SiC is a semiconductor, meaning that it conducts electricity at high temperatures and voltages, as well as being an abrasive. Grains of SiC can also be combined together into very hard ceramics used in applications requiring high endurance, such as car brakes and clutches; synthetic moissanite gemstones can also be cut to create very hard ceramics used in applications requiring high endurance such as car brakes and clutches – although rare materials. SiC is commercially produced both as single crystals for use in electronic devices and produced commercially as powders or single crystals for use within electronic devices despite being rare material itself.

SiC FETs and JFETs have become a mainstream component in electronics applications, particularly power applications that benefit from their superior efficiency ratings compared to silicon IGBTs and MOSFETs. Applications using SiC FETs/JFETs in particular include chargers, DC-DC converters, traction drives for electric vehicles as well as telecom/server power supplies; variable speed motor drives; variable frequency drives and solar photovoltaic (PV) inverters.

NASA missions require electronics that are radiation-tolerant and extreme temperature capable, including in-situ exploration of Venus and Europa-Jupiter missions which will operate with temperatures reaching 350degC. These missions necessitate electronics with robust thermal management features to operate safely at these extreme conditions.

SiC is an ideal material for mirrors in astronomical telescopes due to its low thermal expansion coefficient and rigidity; Herschel Space Telescope mirrors and Gaia observatory both utilize this material. Furthermore, SiC offers shock resistance which makes it suitable for military equipment like laser systems.

UnitedSiC (now Qorvo) is driving SiC adoption by providing innovative device technology that delivers world-leading levels of performance, reliability and energy efficiency for advanced battery-powered applications. UnitedSiC is the only fabless manufacturer offering SiC power transistors, rectifiers and subsystems which can be combined into complete modules; furthermore its portfolio of power semiconductors boasts various voltage/current ratings in 4-Lead Kelvin packages to enable designers to reach their desired system performance without compromise.

Customer Support

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United Silicon Carbide, Inc (USCi) provides silicon carbide (SiC) power semiconductor devices that deliver power efficiency at affordable costs for key markets within the new green economy. Our SiC FETs, JFETs and Schottky diodes enable affordable power solutions within these key markets that drive this global green movement.

USCI was established in 1993 and is headquartered in Monmouth Junction, New Jersey. They specialize in silicon carbide (SiC) power devices and were early developers of this technology. Governor Kim Guadagno of New Jersey joined other state and local officials at an opening ceremony of their expanded facility in Monmouth Junction to celebrate USCI’s expansion.

Qorvo acquired United Silicon Carbide of Princeton, which manufactures silicon carbide (SiC) power components. This acquisition expands Qorvo’s presence in fast-growing markets like electric vehicle chargers, industrial power, circuit protection, renewable energy, and data centers.

Contact Us

United Silicon Carbide manufactures semiconductors. The Company produces silicon carbide (SiC) power semiconductors designed to meet high efficiency applications and serves New Jersey customers from its headquarters in Princeton, New Jersey. Established in 1999 and located nearby.

United Silicon Carbide’s investors include Qorvo, GHO Ventures and JumpStart NJ Angel Network. With more than 80 SiC FETs, JFETs and Schottky diode devices that deliver new levels of silicon carbide power efficiency and performance critical for electric vehicles, industrial power, circuit protection systems, renewables and data center power systems; United Silicon Carbide offers its product portfolio to meet this need.

The company offers high-efficiency SiC power semiconductors and diodes as well as solutions using SiC-based inverters, DC-DC converters and traction drives for advanced power management, battery chargers and solar photovoltaic inverters.

Silicon carbide (SiC), commonly referred to as carborundum, is an extremely hard chemical compound composed of both silicon and carbon atoms. Naturally occurring as the rare gem moissanite, SiC has been mass produced since 1893 in powder and crystal form for use as an abrasive. Grains of SiC can also be bonded together into ceramic materials like those used in automobile brake pads or bulletproof vests, or cut into gemstones known as synthetic moissanite.

United Silicon Carbide employs about 50 staff. Their annual revenue ranges between one to fifty million USD and is steadily growing; their SIC code is 0115 while NAICS code is 211320.

United Silicon Carbide announced in a press release that it has entered into an exclusive global distribution partnership with Digi-Key Electronics to market and distribute their full lineup of silicon carbide (SiC) power and power management semiconductors for customers’ wide ranging applications. Through this alliance, customers will have access to cutting edge SiC power semiconductor technology at Digi-Key.

USCi’s customers will benefit from access to SiC MOSFETs, HEMTs and diodes produced by USCi – increasing design flexibility when developing electronic products that require high reliability and performance in harsh environments such as automotive, industrial, aerospace or defense products. In addition, this partnership will give them one stop shop for all their power semiconductor needs.