Silicon Carbide Semiconductor Advancements

Silicon carbide semiconductors have revolutionized many industries over time.

Silicon carbide (SiC) is an extremely robust hexagonal structure chemical compound with wide band-gap semiconductor properties and boasting a breakdown field strength ten times stronger than silicon, as well as three times larger band gaps than its silicon counterpart.

High-Voltage Applications

Power devices constructed using silicon carbide provide numerous advantages, including higher switching efficiencies, higher voltage outputs and reduced cooling requirements, making for more compact and lightweight designs.

Silicon devices also boast faster operation compared to organic semiconductors, lower turn-on resistance and longer operational lifetime – features which make them highly desirable in automotive applications, where demand for higher energy density and reliability continues to rise quickly.

Carmakers have increasingly turned to wide band gap semiconductors like SiC to meet increasing demands for quality and performance in electric vehicles (EVs). By improving power conversion systems efficiency, wide band gap semiconductors such as SiC allow greater driving range without needing more battery capacity.

High-Temperature Applications

Silicon carbide semiconductors can perform in extreme temperatures and radiation environments that a standard silicon (Si) semiconductor cannot. Their wide band gap enables them to handle power levels up to 10 times higher than regular Si semiconductors, making them perfect for applications such as vehicle propulsion systems or harsh environments with temperatures reaching beyond normal limits.

NASA Lewis Research Center’s High Temperature Integrated Electronics and Sensors Program is exploring SiC as a high-temperature material to address various aerospace and commercial applications, such as instrumentation for jet engine control and monitoring; deep well drilling applications where pressure increases with depth; automobile combustion chambers; among others.

ROHM has been at the forefront of silicon carbide semiconductor innovation for more than half a century, designing and producing world-class semiconductors, integrated circuits, modular items with creativity and care in mind – their goal being to facilitate arrangements that will positively shape both our lives today and into tomorrow.

High-Power Applications

SiC semiconductors are revolutionizing power electronics by providing higher efficiencies, reduced costs and smaller components – contributing to a greener, more sustainable future.

SiC is uniquely capable of handling higher voltages than traditional silicon devices due to its thinner n-layer, which allows dopant density doping with much greater ease, leading to significantly higher blocking voltage for same die sizes.

Silicon carbide is an ideal material for high-voltage applications like power converters, inverters and motor control systems, while it is also an ideal material choice for electric vehicle fast chargers as it can reduce system losses by up to 30% while simultaneously increasing power density for faster charging times.

Wolfspeed’s industry-leading SiC power semiconductors and expertise give power systems designers the tools necessary to develop lightweight yet energy-saving systems that contribute to a greener world. Discover more here about our full selection of silicon carbide power devices.

Rail Transit Applications

Silicon carbide (SiC) power semiconductors are driving a rail transit revolution thanks to their superior physical and electronic properties. Not only are these semiconductors much more durable than conventional silicon devices, they also enable power management with greater efficiency while being toxicologically safe.

SiC’s superior durability and reliability make these devices suitable for many applications where silicon devices have traditionally been utilized, including high-power traction control inverters for electric vehicle charging systems. Furthermore, SiC has an exceptionally wide band gap which allows it to transport electrical energy more efficiently than its silicon counterparts.

ROHM Semiconductor is one of the premier producers of SiC Power semiconductors that are leading efforts toward decarbonization in industry. Their high-voltage MOSFETs, for instance, help improve standards across other technologies that depend on semiconductors such as electric vehicle charging systems, solar inverters, and battery management – as well as contributing towards ROHM Semiconductor’s dynamic and ‘never stop’ approach – helping propel semiconductor industry innovation forward at lightning speed.