Silicon Carbide Power Modules

Silicon Carbide (SiC) power modules offer revolutionary new solutions for power applications, offering greater system efficiency in terms of system size, weight and form factor. Their higher operating temperatures, faster switching frequencies and smaller magnetics reduce system costs significantly.

Vincotech addresses this challenge with advanced die-attach technology to mitigate SiC’s mechanical properties that decrease its power cycling ability compared to standard silicon devices.


The ACEPACK DRIVE is a high-performance silicon carbide (SiC) power module designed to increase performance and drive range in electric vehicles. Equipped with SiC MOSFETs and diodes with voltage ratings up to 1,200V and an embedded NTC thermistor that monitors motor current consumption, these modules come in six-pack and converter + inverter + brake (CIB) topologies using active metal brazed (AMB) substrate technology for optimal thermal efficiency and mechanical strength as well as mounting options such as welding or screw-fit busbar mounting requirements for different mounting requirements.

The module utilizes ST’s third-generation SiC Power MOSFETs, which feature the best-in-class figure of merit and switching losses in their class, leading to more compact designs with reduced system room occupancy and weight while increasing efficiency and prolonging battery pack lifespan. ACEPACK DRIVE modules can also be found in hybrid and electric vehicle traction inverters for extended driving distance by saving recharge cycles.

Hybrid electric vehicles must balance energy efficiency with limited battery space. The ACEPACK DRIVE modules feature high levels of configuration flexibility, making it easy to adapt them for different power conversion stages and applications such as industrial motor drives, solar panel systems and welding tools.

When compared with conventional IGBT solutions, the ACEPACK DRIVE can save over 7% in system losses while increasing efficiency by as much as 30%. Furthermore, its modules feature lower device loss per power stage than their conventional counterparts while operating five degrees cooler under load compared to conventional IGBTs – not to mention managing higher operating temperatures associated with electric vehicles without losing performance.

STMicroelectronics’ SiC power modules for use in electric vehicle (EV) traction inverters also include press-fit pin connections to ensure reliable electrical and thermal contact between devices and circuit boards, with maximum temperatures reaching 175degC withstand ability. They feature pin fin arrays for efficient heat dissipation.


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Silicon has long been considered the go-to material for power semiconductors. While silicon may excel at low power applications, its wide bandgap makes silicon carbide better equipped to handle higher temperatures, frequencies and voltages with reduced losses and increased efficiency – something especially valuable in power conversion processes that generate heat.

Energy efficiency means reduced costs and environmental impacts, and siC power modules help users meet this goal by decreasing energy consumption. Their high-performance design also enhances reliability while their superior thermal conductivity reduces cooling component needs – saving both money and resources on electricity usage costs.

One of the primary uses for silicon carbide is in power conversion systems. These systems convert DC power from batteries into AC power that motor drives can use. They must meet several criteria, including high efficiency, ruggedness and bidirectional energy flow; silicon carbide modules meet these demands while meeting internal and external standards including government regulations.

Silicon carbide’s thermal stability also makes it ideal for harsh environments, enabling new designs that operate without costly cooling components and making more cost-effective power converters for use in aerospace, industrial test equipment and electric vehicle charging applications. This technology also enables more energy-efficient power converter designs suited for use by aerospace applications and electric vehicle charging services.

Silicon carbide power modules now boasting cutting-edge packaging and power electronics technologies are now available, designed for demanding applications. They boast 175 degrees Celsius continuous junction temperature, excellent gate oxide stability and lifetime, robustness against unclamped inductive switching avalanches (avalanche switching), extended capability against short circuits, as well as low RDS(on) shift across their full operating temperature range.

These modules feature high-speed switching and low stray inductance to minimize magnetics component size, leading to lower system weight and volume which equates to significant savings on space launch costs. Furthermore, these modular building block designs increase flexibility while decreasing engineering costs and timelines.

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