製品関連

Silicon carbide tube is an exceptional industrial material. With excellent resistance to wear and corrosion, low thermal expansion rates and chemical inertness properties it makes an ideal material choice for many different applications. SiC tubes are manufactured using sintered alpha silicon carbide and provide excellent surface finishing, tight dimensional control and an extremely fine grain size without the need for after-sintering. Corrosion Resistance Silicon carbide ceramic material boasts a Mohs hardness rating that rivals diamond, making it one of the toughest industrial ceramic materials on the market. This allows it to withstand harsh environments and corrosive chemical solutions without degrading or becoming compromised, providing long-term performance for industrial applications. Furthermore, …

Silicon Carbide Tube – Ideal for a Range of Industrial Applications もっと読む »

Silicon carbide (SiC) heating elements are popularly found in high temperature electric furnaces, where they can be mounted horizontally or vertically for use. Globar SiC heating elements feature hot zones of dense recrystallized silicon carbide that have been optimized to resist oxidation and chemical attack from process volatiles and reactive environments. They come with either single- or multi-leg designs. SC Type The SC Type silicon carbide heating element features a hollow tubular heating part with thickened ends to withstand sudden changes in cold and heat without deforming, making it suitable for high-temperature box furnaces that require precise temperature control. These elements are constructed using recrystallised green high-purity hexagonal silicide, a …

炭化ケイ素発熱体 もっと読む »

Silicon carbide (SiC) is a hard chemical compound of silicon and carbon. Commonly referred to as carborundum, it occurs naturally as the rare mineral moissanite and has been manufactured as powder or crystal since 1893 for use as an abrasive. Industrially produced by the Acheson process in which pure silica sand and ground coke are heated together at high temperatures to form yellow to green to bluish-black crystals that sublimate with decomposition at 2700degC and have a density of 3.21g/cm3. Thermodynamics Silicon carbide (SiC), is an alloy composed of pure silicon and carbon that is commonly manufactured as an abrasive and in ceramics for use as an abrasive. While naturally …

炭化ケイ素とは？ もっと読む »

炭化ケイ素（SiC）は、優れた耐熱性と強度特性を持つ高度なセラミック材料である。希少鉱物のモアッサナイトとして自然界に存在するSiC粉末は、研磨剤用途に広く使用されるようになりました。グレージング用として使用されるだけでなく、気泡やブリスターなどの還元効果もこの材料で作られ、過度の気泡やクレーターなど、キルン内での潜在的な問題につながります。硬度 炭化ケイ素は地球上で最も硬い材料の一つであり、ダイヤモンドに次いで硬い。モース硬度9という非常に硬い炭化ケイ素は、優れた耐久性と物理的磨耗に対する耐性を誇り、...

炭化ケイ素セラミック もっと読む »

Silicon carbide (SiC) is one of the lightest and hardest ceramic materials. It excels at resisting wear-and-tear damage from wear-and-tear, chemical spillage resistance, low thermal expansion rates and self-sharpening capabilities – characteristics which make SiC an attractive choice. SiC semiconductors boast an exceptional wide band gap, enabling them to work at higher voltages and frequencies than standard silicon devices – making them the perfect choice for use in electric vehicle fast charging and power conversion applications. Density Silicon carbide (SiC) is a hard material with a high melting point that finds widespread application due to its hardness, toughness, corrosion resistance, high strength, low weight and wide operating temperature range. Furthermore, …

Silicon Carbide Density and Applications もっと読む »

Silicon carbide is an inert, chemically inert solid material with tremendous strength and hardness derived from its covalent bonds held together by silicon and carbon tetrahedra. Furthermore, this substance offers excellent chemical and thermal shock resistance properties. Edward Acheson first discovered aluminum oxide in 1891 and used it as a synthetic abrasive. With a Mohs hardness rating of 9, only boron carbide and diamond exceed it in terms of hardness. It is a semiconductor Silicon carbide (SiC) is an extremely hard and durable semiconductor material composed of silicon and carbon, often found naturally as the rare mineral moissanite and produced commercially as powder abrasives. SiC is known for its exceptional …

炭化ケイ素とは？ もっと読む »

Recrystallized silicon carbide (RSiC) is an exceptional ceramic that excels at performing a wide array of applications. With superior mechanical properties and unparalleled corrosion resistance, RSiC stands out among ceramic materials as one of the premier choices for use in many industrial settings. Slip casting, extrusion, or injection molding can be used to produce this material which is then sintered at high temperatures to remove binder material and reveal pure RSiC. Strength Recrystallized silicon carbide (RSiC) is an extremely strong ceramic material with superior mechanical strength that maintains its properties at extremely high temperatures, making it suitable for a range of applications in industries including chemicals, metallurgy and wear-resistant materials …

Recrystallized Silicon Carbide もっと読む »

Silicon carbide, commonly referred to as SiC, is a black or dark green crystalline material which can either be synthesized in a laboratory setting, or found naturally as the rare mineral moissanite. Ceramic materials rank among the lightest, hardest, and strongest advanced ceramic materials available today. Their resistance to physical wear, corrosion, thermal expansion and contraction is unparalleled and offer unique electrical properties as well. Physical Properties Silicon carbide (SiC) is an extremely hard and brittle material found both naturally in nature as the mineral moissanite as well as industrially for use as an abrasive and semiconductor. Due to its unique combination of physical properties, SiC has long been sought-after …

Silicon Carbide Definition もっと読む »

珪砂のケイ素と石炭の炭素を組み合わせることで、炭化ケイ素（SiC）という驚異的な材料が生まれる。SiC基板は、EVや5Gネットワークなどの技術進歩を牽引している。SiCウェハーの製造には高度な技術と深い専門知識が必要であり、メーカーは製造工程における歩留まりと信頼性の向上に努めなければならない。硬度 炭化ケイ素（SiC）は、非常に硬く、耐久性のある非酸化物セラミック材料で、いくつかの有利な特性があります。耐腐食性、耐摩耗性、高温下での強度と靭性の維持、優れた熱伝導性と低熱膨張係数など、SiCを高性能パワー半導体デバイスの優れた基板材料としています。SiCは万能半導体材料です。

炭化ケイ素ウェハーの利点 もっと読む »

炭化ケイ素（SiC）は既知の物質の中で最も硬いもののひとつであり、弾丸から身を守るセラミック・ブロックや、高速で作動するポンプのシール材に最適である。カーボンブラックの粉末は研磨材として製造されるほか、ドーピングして半導体にすることもできるため、信号を増幅したり切り替えたりする電子機器に有用である。物理的特性 炭化ケイ素は、硬くて耐久性のある非酸化物セラミックで、さまざまな産業用途に適した多くの望ましい特性を備えています。炭化ケイ素は、優れた熱伝導性を誇りながら、極端な温度にも耐えることができます。さらに、炭化ケイ素は最も硬い合成材料の1つです（モース硬度はダイヤモンドに次いで2番目）。

炭化ケイ素の特性と用途 もっと読む »