製品関連

Silicon carbide armor has been praised for saving lives during terrorist attacks, mass shootings and other high-risk situations. Due to its unique atomic structure and energy absorption properties, this material makes an excellent shield against projectiles that could otherwise strike at personnel. Silicon carbide has emerged as an attractive option due to its superior multi-hit performance and more cost-effective production costs, and has quickly become one of the premier materials used for protecting steel core AP threats in single shots. Manufacturing Silicon carbide is an adaptable material with numerous applications. It has high resistance to wear and abrasion, a high melting point and chemical stability – ideal properties for body …

Silicon Carbide Armor Saves Lives もっと読む »

Silicon carbide (SiC) is an intermetallic solid that lies somewhere between metals (which conduct electricity) and insulators, with wide band gaps and high electron mobility, making it an attractive material choice for power electronics applications. Silicon’s ability to resist chemical attack at high temperatures and its strength across a broad temperature range make it ideal for resistance heating elements in semiconductor furnaces and thermistors; however, unlike metals it does not conduct electricity as efficiently. Conductivity Silicon carbide (SiC) is an extremely hard, tough material with many unique properties that can be tailored for different applications. As an insulator at lower temperatures and conductor at higher ones, this makes SiC an …

炭化ケイ素の電気伝導率とは？ もっと読む »

Silicon carbide is an inert chemical compound with high melting and boiling points, that can be made into non-reactive ceramic plates used in bulletproof vests. As it’s also a semiconductor material, silicon carbide makes an excellent material choice. Due to its exceptional electrical properties, silicon has the potential to extend electric vehicle driving range by improving energy conservation while decreasing size and weight of power electronic systems. Hardness Silicon carbide (SiC) is an inert and chemically stable compound composed of carbon (C) and silicon (Si). Occurring naturally as the gem moissanite, mass production in powder form has taken place since 1893 for use as an abrasive and as part of …

炭化ケイ素とは？ もっと読む »

Wide bandgap power semiconductor devices such as silicon carbide MOSFETs have become an increasingly popular component in electronic circuit designs, as their superior performance over conventional silicon-based power semiconductors make them attractive solutions. MOSFETs consist of three terminals known as source, drain, and gate. Applying positive voltage to the gate creates an electric field which allows current to flow between source and drain to turn on the device. Low On-State Resistance Silicon carbide MOSFETs feature lower on-state resistance than their silicon counterparts, enabling higher switching frequencies and decreasing switching losses, leading to improved system efficiencies in systems such as grid conversion or electric vehicle use. High speed switching in these …

Advantages of Silicon Carbide MOSFETs もっと読む »

Fuji Silicon Carbide (SiC) guide rings are considered one of the highest quality materials available; their hardest and most durable material offers unparalleled abrasion resistance and diamond polishing to provide one of the smoothest rings available. Fuji’s secret to their strength lies in their deep-pressed ring design. This ensures better grip between rings and frames and safeguards against the effects of aggressive bending. Alconite Fuji’s engineers toiled long and hard in search of a ceramic that offered strength, lightness and durability in one package. After exhaustive searching they came up with Alconite – an impressive new ceramic blend which is 35% lighter and 50% stronger than aluminum oxide rings while …

Fuji Silicon Carbide Guides もっと読む »

Silicon carbide is an exceptionally hard, crystalline ceramic with outstanding strength and thermal conductivity, capable of withstanding high temperatures without thermal expansion and chemical stability. Recently, we reported record-high isotropic room temperature phononic crystal thermal conductivity (k) values in wafer-scale 3C-SiC bulk crystals at temperatures greater than room temperature; our figure was over 50% higher than commercial 6H-SiC and AlN products. 1. Low thermal expansion Silicon carbide ceramics have an ability to maintain their strength at elevated temperatures while resisting thermal shock, an important feature considering that sudden temperature shifts can create thermal stresses in materials, leading to microcracks. Silicon carbide’s low thermal expansion rate makes it an excellent material …

炭化ケイ素の強度と熱伝導率 もっと読む »

Silicon carbide (SiC) is a hard, chemically inert material widely used as both an abrasive and ceramic component in high endurance products. Available in various grain sizes and binder formats with differing purity levels and densities, SiC can be found everywhere from industrial applications to consumer goods manufacturing facilities. SiC was first mass produced commercially by Edward Goodrich Acheson in 1891 through his Acheson process after discovering what appeared to be moissanite-like black crystals while heating an electrically heated solution of clay and powdered coke. The chemical process Silicon Carbide (SiC) is an extremely hard material with unique ceramic and semiconductor properties, which makes it a fantastic option for high-temperature …

炭化ケイ素はどのようにして作られるのか？ もっと読む »

Silicon carbide is an versatile compound with numerous applications in numerous industries such as resistance heating, flame igniters and electronic components. Due to its composition and manufacturing process, silicon carbide can act both as an insulator or conductor depending on its composition and fabrication process. With such diverse properties it has become an invaluable asset in these areas of practice. Manufacturers can tailor its electrical conductivity by doping it with nitrogen, phosphorus, beryllium, aluminum and gallium to produce either n-type or p-type semiconductors. Furthermore, its high thermal conductivity makes it a useful material for heat exchange applications. Properties Silicon carbide, commonly referred to as SiC, is a hard and durable …

炭化ケイ素の導電性とは？ もっと読む »

Silicon is traditionally the go-to material for power semiconductors, but recently silicon carbide (SiC) has emerged as an alternative material choice that offers improved performance for high heat, high voltage applications. SiC power modules feature higher switching frequencies with reduced losses for more compact passive filter components, thus providing higher power density in systems at reduced costs. Fast switching Wide-bandgap silicon carbide (SiC) power semiconductors could revolutionize the power module market with faster switching speeds, lower losses, and reduced electromagnetic interference (EMI). But taking full advantage of SiC modules’ advantages requires using an appropriate approach when designing and assembling them – here are a few best practices that may help …

炭化ケイ素パワーモジュールの利点を最大限に引き出す方法 もっと読む »

Wolfspeed develops wide bandgap semiconductor materials and power devices for use in electric vehicles, fast charging stations, 5G networks, renewable energy applications, aerospace & defense programs as well as renewable energy projects. Wolfspeed are currently world leaders in SiC (silicon carbide) power device production. Construction project of John Palmour Manufacturing Center for Silicon Carbide will allow this company to increase material capacity by twofold to meet rising demands for silicon carbide products. What is Silicon Carbide? Silicon Carbide (SiC) is a crystalline material comprised of equal portions of silicon and carbon. This hard and durable material resists high temperatures well, and is used in industrial applications like sandblasting, grinding wheels, …

ウルフスピード炭化ケイ素パワーデバイス もっと読む »