Silicon Carbide Polishing
Silicon carbide (SiC) can be difficult to polish due to its extreme hardness. Chemical polishing is therefore frequently employed in order to produce high-quality surfaces finishes. CMP uses both chemical reactions and mechanical removal techniques to planarize SiC wafers. In the CMP process, an oxidant in the polishing slurry reacts with SiC samples to form an oxide film on their surfaces that can then be mechanically removed by using abrasive particles as part of an abradant layer removal solution. Chemical Mechanical Polishing Chemical Mechanical Polishing (CMP) is an integral step in the creation of integrated circuits (ICs), making silicon wafer surfaces uniformly flat by using chemical reactions and mechanical abrasion …