A Silicon Carbide Wafer is a Critical Component in the Power Devices That Drive the World’s Newest Technologies
Silicon carbide wafers are key components in power devices that drive cutting-edge technologies worldwide. Rising demand and efforts to bring power device performance closer in line with that of traditional silicon-based substrates necessitate innovative solutions. Originating as an industrial abrasive material since 1893 and found only rarely as moissanite jewels, SiC is hard and brittle, necessitating manufacturers to adopt unique procedures in order to successfully process this material. Electrical and thermal properties Silicon carbide is an extremely versatile material, ideal for use as a semiconductor substrate. Its physical hardness (second only to diamond), stability under high temperatures and current, resistance to chemical attack, durability and chemical ingress resistance all make …