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Podjetje za proizvodnjo silicijevega karbida bi lahko postalo pomemben igralec na področju energetike in trajnostnega razvoja

Silicijev karbid (SiC) je inertni polprevodnik s širokim pasovnim razmikom. SiC je bil prvič odkrit konec 19. stoletja kot abraziv, od takrat pa se uporablja tudi za izdelavo trajnih keramičnih komponent, kot so zavorne ploščice in sklopke za avtomobile. Proizvajalci SiC, kot je Wolfspeed, so pritegnili naložbe zaradi svojega poudarka na aplikacijah za zeleno energijo. Partnerstvo z ...

Podjetje za proizvodnjo silicijevega karbida bi lahko postalo pomemben igralec na področju energetike in trajnostnega razvoja Preberite več “

Lepljenje silicijevega karbida - SiC z nitridom

Silicijev karbid se pogosto uporablja za aplikacije, ki zahtevajo odpornost proti koroziji, abraziji in visokim temperaturam ter trdnost in žilavost, zlasti pri udarcih. Obstajajo številne tehnike lepljenja oblikovanih delov iz silicijevega karbida s kovinskimi ali drugimi deli iz silicijevega karbida. Žal pa te drage in zapletene metode še vedno niso ...

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Proizvajalci polprevodnikov iz silicijevega karbida

Polprevodniške naprave iz silicijevega karbida se vse bolj uveljavljajo v aplikacijah industrijske avtomatizacije, kot so roboti, proizvodni obrati in motorni pogoni, kar spodbuja rast trga. Zaradi visoke trdnosti, odlične toplotne prevodnosti in vzdržljivosti so odlični za takšna zahtevna okolja. Proizvajalci SiC vse bolj izkoriščajo prednosti uvedbe izdelkov, sporazumov, partnerstev, prevzemov in širitev, da bi ...

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Konferenca o silicijevem karbidu 2023

ABSTRACT: Power semiconductor devices built on silicon carbide (SiC) substrates offer significant energy savings and reduced system footprint for electric vehicle power electronics, providing longer driving range or reduced battery capacity to enable long drive distance. This keynote examines industry commitment to using wide bandgap materials and silicon carbide power electronics to foster a more …

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Advantages of Silicon Carbide SiC

Silicon carbide sic offers many advantages that have led to its widespread adoption across multiple applications, including 10 times higher breakdown electric field strength and three times greater band gap compared to silicon. Material for production involves melting carbon and silica at temperatures reaching 2700 degrees Celsius in an electrical resistance furnace before cooling for …

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Silicon Carbide Grinding Wheel

Silicon carbide abrasives are hard and sharp materials used in sandpaper, with razor-sharp grains for efficient metal, stone, and medium-density fiberboard sanding applications with minimal pressure application. Unfortunately, silicon carbide wears down more quickly than its aluminum oxide counterparts due to brittleness and narrow grain size differences between grains. High hardness Silicon carbide grinding wheels …

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Nitride Bonded Silicon Carbide NB SiC

Nitride bonded silicon carbide (NB SiC), one of the more advanced ceramics, has made a name for itself in terms of durability in industrial applications. Its development represents mankind’s incessant quest for materials capable of withstanding extreme environmental and industrial conditions. Soil tests showed that nitride bonded silicon carbide wore less intensively than boron steel …

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Silicon Carbide Stocks

Silicon carbide (SiC) is a wide bandgap semiconductor material. While naturally found as the gem-grade moissanite, industrial production on an enormous scale allows SiC to be utilized in applications as diverse as abrasives and ballistic armor. Leading SiC suppliers had recently seen their valuations climb considerably, until Wolfspeed reported disappointing earnings and provided guidance that …

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Postopek izdelave silicijevega karbida

Silicon carbide is produced through melting silica sand with carbon sources such as coal at high temperatures; this process is known as Lely’s method. Silica sand and graphitized petroleum coke carbon are the primary raw materials utilized in manufacturing. Additional auxiliary materials, like sawdust and salt, may also be utilized but do not contribute directly …

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