Silicon Carbide Conference 2023

Silicon carbide has recently made headlines due to its semiconductor properties – but what exactly are its qualities that have brought such attention?

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The 19th edition of ICSCRM will be held in Sorrento

Since its inaugural meeting held in Washington DC in 1987, ICSCRM has established itself as the preeminent international forum for technical discussions of silicon carbide (SiC) and related materials. It explores, presents and discusses new achievements in wide bandgap semiconductor technology with special attention given to SiC. ICSCRM brings together some of the world’s foremost experts and leading companies working on SiC related topics.

This year’s conference will take place in Sorrento, known for being the birthplace of Limoncello. As such, this charming Italian city provides an idyllic destination perfect for relaxing conference breaks or family vacations!

The 19th International Conference on Silicon Carbide Refractive Materials will take place from 17-22 September at Hilton Sorrento Palace. This exciting research conference offers oral presentations and posters on an extensive array of research papers covering all aspects of silicon carbide technology such as bulk growth/wafer manufacturing/characterization/devices/quantum technology/processing packaging/applications as well as reliability issues.

At this year’s ICSCRM conference, one of the highlights will be Dr. Giovanna Giordani of University of Naples Federico II will present on “Elaboration of titanium ohmic contacts via laser-induced annealing on 4H-SiC substrate”. While in prior experiments Ni was used as the ohmic contact metal due to its superior electrical performances; titanium has proven superior on SiC surfaces due to lower specific conduction loss and better contact morphology.

Mario Saggio of STMicroelectronics will also present on “SiC Power Devices: Converting SiC’s Golden Age into Opportunities”. For more information about ICSCRM 2023 visit our website.

Navitas Semiconductor was established in 2014 as the only pure-play next-generation SiC power semiconductor company. Their GaNFast(tm) Power ICs integrate gallium nitride power and drive with control, sensing, and protection to deliver higher energy efficiency across EV, solar, data center/home appliance/industrial, mobile consumer applications as well as consumer and mobile consumer. Furthermore, GeneSiC(tm) devices have been optimized specifically for high power, high voltage, high reliability applications.

Registrations are open!

The International Conference on Silicon Carbide Research and Manufacturing (ICSCRM) is the premier technical forum on this subject worldwide, hosting biennially since 1987 in different locations: USA, Europe and Japan. This year’s 19th Edition will take place in Giardini Naxos Italy with expected participation at record numbers.

Silicon carbide semiconductors have emerged as an attractive option to traditional silicon semiconductors for many demanding applications, due to its larger bandgap. This enables it to more effectively transfer electrical energy between conductors (such as copper electrical wiring) and insulators ( such as polymer insulation on these wires) in power electronics such as traction inverters for electric vehicles and DC-DC converters used to charge them and operate their motors.

Implementing SiC in demanding applications such as these necessitates overcoming significant hurdles to cost, performance and reliability. A key aspect is ensuring accurate doping of silicon carbide; conventional epitaxial doping tends to create large variations in its concentration and distribution across voltage sustaining layers that restrict device performance while complicating wafer diameter scaling.

At one time, this challenge has proven insurmountable; but thanks to Fast Sublimation Growth Process Monocrystalline (FSGP-M), breakthroughs have made it possible to produce SiC substrates with lower defect densities for use with higher voltage class power semiconductor devices such as MOSFETs.

This conference will bring together world-leading researchers in wide bandgap materials and related technologies, including crystal and epitaxial growth as well as device and RF performance. There will also be time dedicated for poster sessions from individuals at all career stages as well as communal meals to foster networking between leaders of this field.

Register for the conference now to get informed on the latest research and advancements, while discovering potential business opportunities! Don’t miss this great chance – register today and don’t be left behind!

The program is now available!

Silicon carbide has recently made headlines for its many desirable properties that make it a suitable replacement for silicon semiconductors, including increased temperature and voltage capabilities, lower thermal expansion coefficient, hardness, abrasion resistance and cost effectiveness in applications such as power electronics in electric vehicles or advanced sensors used under extreme conditions. It is often seen as an ideal replacement material.

Join us and celebrate an important step on SiC’s path from early ideation to its essential role in power management for high-powered applications.

The program for Wide Bandgap Materials and Devices 2016 is now available, featuring oral and poster presentations on the most up-to-date materials and devices in wide bandgap technology. Speakers will discuss new developments across many areas including crystal growth, materials research, device design/manufacturing processes, power/RF applications as well as power distribution networks.

STMicroelectronics will serve as an Emerald Sponsor at this year’s conference and its experts will present their research findings at this year’s meeting. Mario Saggio, Design Director for SiC power converters at STMicroelectronics will present a keynote talk entitled: ‘The Golden Age of Silicon Carbide: Unlocking Its Potential Opportunities for Energy Conversion.”

Attendees of this conference can expect to hear from leading industry players about their experience using wide bandgap technologies in industrial applications and other commercial fields, along with networking opportunities and discussions about its future development.

In addition to presenting cutting-edge research, ICSCRM also serves as an international forum for scientists and engineers working on wide bandgap semiconductors. Established in Washington, DC in 1987, this biannual event alternates between North America and Europe.

The 19th ICSCRM will be its last of its kind; from 2023 onwards it will merge with its European edition to form one annual event known as ICSCRM and follow a global SiC community rotation schedule. Please visit the conference website here for full program information of ICSCRM 2023.

STMicroelectronics is an emerald sponsor!

The International Conference on Silicon Carbide and Related Materials (ICSCRM) is an annual scientific event dedicated to exploring, presenting, and discussing advancements in wide bandgap semiconductors with special attention paid to silicon carbide. Researchers and engineers from industrial, academic, and public sectors gather together at this annual scientific event in order to share knowledge regarding recent advances in silicon carbide as well as other wide bandgap semiconductors.

Since 1987, the International Silicon Carbide Conference and Repository Meeting (ICSCRM) has become the global forum for in-depth technical discussions regarding all aspects of SiC – from crystal growth to device reliability. Held every two years alternatingly in Washington DC, Europe and Japan since then, it brings together some of the world’s foremost engineers, scientists and companies working on silicon carbide.

SiC is uniquely equipped to play an indispensable role in transitioning towards clean energy sources while meeting climate change, pollution and resource depletion head-on. This keynote will explore its essential function as an enabler, noting its contributions at product, application and system levels.

Clayton Pillion has served Microchip for more than 15 years in various high-profile capacities – such as starting the 32-bit MCU business, leading the wireless solutions group and human machine interface division (HMID), as well as holding various corporate roles.

STMicroelectronics will serve as an Emerald Sponsor at ICSCRM 2023, offering items like program booklets, abstract USB sticks and conference bags as well as printing their logo on the conference website. They’ll also exhibit in the exhibition hall from September 20-21 for visitors to meet its experts and learn more about its technology – it will run for all conference attendees to visit! For more information visit the 2023 edition website or Twitter using #ICSCRM2023. We look forward to seeing you there!