Silicon Carbide Conference 2023

Silicon Carbide (SiC) drives are increasingly important as efficiency standards tighten across industrial drives, offering significant energy savings, power density improvements and cost reductions that contribute to creating a sustainable future. This keynote will explore this topic.

Silicon carbide, commonly referred to as carborundum, is an inorganic chemical compound consisting of silicon and carbon. Though small amounts occur naturally as moissanite gemstone, most is produced synthetically.

ICSCRM 2023

The International Conference on Silicon Carbide and Related Materials is the premier global forum for technical discussions of wide-bandgap semiconductors. Since 1987, its initial meeting, now biannual meetings in both Europe and America bring together scientists and experts from across disciplines to share updates in silicon carbide research and developments. At its 2023 program event, experts will present keynote talks as well as poster sessions dedicated to wide bandgap materials.

STMicroelectronics will serve as an Emerald Sponsor at this year’s ICSCRM, presenting authoritative research papers in both oral and poster forms. Furthermore, leading industry figures including Mario Saggio of ST’s SiC power devices division will speak about current state SiC technology as it applies to power electronics applications like electric vehicle drive and conversion systems.

SiC MOSFETs are ideal for electric vehicle (EV) power electronic systems due to their higher breakdown voltage and operating temperature capabilities, higher efficiency and reduced parasitic effects. Such advantages allow significant energy savings or reductions in battery size required to reach driving range goals; however, their mass adoption can be restricted due to high costs for pSiC substrates and uneven epitaxial thickness uniformity.

mi2-factory GmbH of Jena, Germany presents an innovative approach to overcome these limitations by using an energy filter for ion implantation that creates SiC epitaxial layers with precise doping variations. A simple optical system converts monoenergetic ions into well-defined broad spectrum ones for drift zone doping without expensive decelerators.

Navitas Semiconductor (Nasdaq: NVTS) is the sole next-generation power semiconductor company dedicated to expanding SiC adoption within power electronic applications. Established in 2014, Navitas offers complete solutions with GaNFast(TM) power ICs to optimize power delivery as well as drive, control, sensing, and protection across EV, solar PV panels, storage batteries automotive home appliance/industrial applications and data centers – including innovative technologies that reduce costs while improving efficiencies while decreasing environmental impact across these customer markets. With over 185 patents issued or pending issued or pending from Navitas patents granted or pending, Navitas provides solutions that reduce costs while improving efficiencies while improving efficiencies within these customer markets including EVs solar PV panels/power storage/carrier/home appliance/industrial and data center markets as well as being CarbonNeutral(r). Based out of Torrance California with CarbonNeutral(r).

ICSCRM 2022

ICSCRM is the world’s premier conference series dedicated to Silicon Carbide (SiC) and other wide bandgap semiconductors, covering all areas from crystal growth and reliability of applications through to crystal growth and crystal growth reliability. Established first in Washington DC in 1987 and held biannually ever since alternating between USA, Europe and Japan venues.

The agenda for ICSCRM 2023 features topics related to silicon carbide material growth, characterization and processing; power devices and applications; cross-disciplinary research; keynote addresses from distinguished speakers from multiple fields; poster sessions of researchers worldwide presenting their works at poster sessions; as well as several technical workshops held throughout the conference.

SiC technology is playing an essential role in the green energy revolution. To effectively connect and distribute renewable energy sources, power electronics must operate with maximum efficiency at minimum cost; be small enough for point-of-load and storage applications; communicate with the grid and utilize bi-directional energy, among other criteria. SiC technology stands up well against such requirements – offering superior performance at reduced costs for this demanding application.

One of the greatest challenges associated with SiC power electronics development is creating reliable, high-efficiency devices with a wide temperature range. Accurate doping of voltage sustaining layers requires precision doping using traditional epitaxial techniques – something mi2-factory GmbH’s innovative energy filter can enable. Furthermore, engineers can utilize different energies when implanting an ion during implant processes thus decreasing cost associated with implant.

Engis’ superabrasive finishing systems and complete HYPREZ solution for creating 150mm epi-ready wafers from SiC cut by diamond slurry wire saw, laser split or embedded wire saw are essential in producing high volumes of SiC products. Furthermore, this allows faster planarization by CMP which in turn shortens processing times significantly.

This keynote will examine various approaches to carbon neutrality, such as energy efficiency measures and supply chain optimization, as well as circular economy principles such as employee engagement. Furthermore, these trends will be examined as they pertain to SiC technology’s future development.

The International Silicon Carbide Research Meeting (ICSCRM) is the premier biennial meeting that addresses all aspects of silicon carbide research and development. It brings together scientists and engineers from multiple fields, offering insights into how advances in one subfield drive progress elsewhere – serving as an invaluable source of information and inspiration to many researchers in this field.

ICSCRM 2021

ICSCRM 2021 marks the 13th edition of this renowned conference on silicon carbide and related materials, first held in 1987 and held bi-annually ever since. From crystal growth to reliability in applications, attendees can stay abreast of developments related to SiC technology – from crystal growth to reliability in applications. Previous conferences were hosted in Washington DC (five times), Giardini Naxos (Italy) and Kyoto Japan – each time offering opportunities for collaboration and knowledge sharing among leading experts from this field.

The conference agenda features lectures and keynote addresses by world-renowned experts in power semiconductors and wide bandgap material science, along with workshops and demonstrations that showcase cutting-edge innovations in high temperature technologies for industrial and telecommunication applications. Furthermore, special sessions cover advanced materials manufacturing reliability issues related to applications.

Keynote speakers at this year’s conference include Dr. Jean-Pierre Rahimo from mqSemi AG of Switzerland and Dr. Johan Kristie from Kiselkarbid i Stockholm AB of Sweden; their keynote presentations will focus on recent advances in wide bandgap semiconductors as well as challenges associated with their applications within industrial and telecommunications applications.

Additionally, the conference will feature an exhibition area showcasing the latest technologies related to silicon carbide. Exhibitors at this exhibition area include manufacturers and suppliers of equipment, raw materials, and components used in silicon carbide-based devices. Anyone interested in participating should reach out directly to conference organizers.

The program is built upon results of an exhaustive peer review process and contains papers on:

SGEM Conferences are international scientific meetings held regularly around the world, recognized internationally for their high-quality conferences in their fields and providing a unique platform for scientists from all over to discuss recent achievements, share experiences and gain an insight into emerging trends and directions within their respective research fields. All accepted papers are then published in Conference Proceedings which is then indexed on ISI Web of Science-Clarivate; ELSEVIER products — SCOPUS Mendeley COMPENDEX CrossRef SPRINGER Nature EBSCO ProQuest and Google Scholar/CiteULike databases among many others.

SICCRM 2023 will take place from September 17-22 in Sorrento, Italy and features world-renowned speakers who have pioneered silicon carbide and gallium nitride technology. The program committee comprises these distinguished individuals renowned for their groundbreaking contributions. This year’s conference is proudly supported by leading companies within the industry and will feature an outstanding technical program, workshops and special sessions that provide opportunities for networking. Silicon Carbide 2018 will showcase an extensive variety of applications for silicon carbide, from high-power transistors and generators to wafer production technologies and crystal growth processes. Furthermore, this conference serves as the premier international forum for in-depth discussion of all aspects related to this rapidly-evolving field.