Sil\u012bcija karb\u012bds (SiC) ir \u0101rk\u0101rt\u012bgi ciets sil\u012bcija un oglek\u013ca \u0137\u012bmiskais savienojums, kas dab\u0101 sastopams k\u0101 moizan\u012bta miner\u0101ls, ta\u010du t\u0101 ra\u017eo\u0161ana pla\u0161\u0101 m\u0113rog\u0101 s\u0101k\u0101s 1893. gad\u0101, lai to izmantotu k\u0101 abraz\u012bvu materi\u0101lu un lietojumos, kam nepiecie\u0161ama \u012bpa\u0161a iztur\u012bba, piem\u0113ram, automa\u0161\u012bnu bremz\u0113s un bru\u0146uvest\u0113s.<\/p>\n
Fizik\u0101l\u0101 tvaiku transporta aug\u0161anas tehnolo\u0123ija ir \u013c\u0101vusi ra\u017eot augstas kvalit\u0101tes 4 collu n-veida SiC substr\u0101tus bez mikrop\u012bp\u0113m1. Tom\u0113r, lai uzlabotu ier\u012b\u010du veiktsp\u0113ju un uzticam\u012bbu, joproj\u0101m \u013coti svar\u012bgi ir v\u0113l vair\u0101k samazin\u0101t papla\u0161in\u0101tos defektus.<\/p>\n
Sil\u012bcija karb\u012bds (SiC) ir IV-IV kovalent\u0101 savienojuma pusvad\u012bt\u0101ju materi\u0101ls, kas sast\u0101v no sil\u012bcija un oglek\u013ca vien\u0101d\u0101 proporcij\u0101, veidojot \u010detras kovalent\u0101s saites starp katru Si un oglek\u013ca atomu.<\/p>\n
SiC plat\u0101 joslas sprauga \u013cauj tam efekt\u012bvi darboties augst\u0101s temperat\u016br\u0101s un pie augstiem spriegumiem, t\u0101p\u0113c tas ir piem\u0113rots energoelektronikas ier\u012bc\u0113m. Turkl\u0101t t\u0101 siltumvad\u012btsp\u0113ja, stabilit\u0101te un ciet\u012bba padara to par lielisku izv\u0113li elektronisko ier\u012b\u010du radiatoriem un substr\u0101tiem, pal\u012bdzot efekt\u012bv\u0101k izklied\u0113t siltumu nek\u0101 alternat\u012bvi materi\u0101li.<\/p>\n
SiC fizik\u0101l\u0101s \u012bpa\u0161\u012bbas nodro\u0161ina augstu precizit\u0101ti un viendab\u012bgumu, izgatavojot t\u0101das ier\u012bces k\u0101 gaismas diodes un l\u0101zerus, k\u0101 ar\u012b abraz\u012bvos un griez\u0113jinstrumentus. SiC ir b\u016btiska noz\u012bme ar\u012b teleskopu spogu\u013cu ra\u017eo\u0161an\u0101, jo tam ir zems termisk\u0101s izple\u0161an\u0101s koeficients un stingr\u012bba; t\u0101 zemais termisk\u0101s izple\u0161an\u0101s koeficients iztur augstas temperat\u016bras, bet radi\u0101cija to aizsarg\u0101. Visbeidzot, SiC ir \u013coti iztur\u012bgs pret koroziju sk\u0101bju, s\u0101rmu un oksid\u0113jo\u0161\u0101s vid\u0113s.<\/p>\n
Sil\u012bcija karb\u012bds ir izcils savienojums ar unik\u0101l\u0101m \u0137\u012bmisk\u0101m un fizik\u0101l\u0101m \u012bpa\u0161\u012bb\u0101m, kas padara to par nenov\u0113rt\u0113jamu izv\u0113li nozar\u0113s, kur\u0101s nepiecie\u0161amas iztur\u012bgas sast\u0101vda\u013cas, kas sp\u0113j iztur\u0113t ekstr\u0113mas vides.<\/p>\n
SiC sast\u0101v no cie\u0161i saist\u012btiem sil\u012bcija un oglek\u013ca atomiem, kas savienoti kop\u0101 neregul\u0101r\u0101 heksagon\u0101l\u0101 re\u017e\u0123a strukt\u016br\u0101, kas pie\u0161\u0137ir \u0161ai vielai iev\u0113rojamu ciet\u012bbu, ierindojot to tre\u0161aj\u0101 viet\u0101 p\u0113c Mosa skalas aiz dimanta un bora karb\u012bda.<\/p>\n
Pateicoties \u0161\u012bm \u012bpa\u0161\u012bb\u0101m, \u0161is materi\u0101ls ir ar\u012b \u012bpa\u0161i iztur\u012bgs: t\u0101 augst\u0101 siltumvad\u012btsp\u0113ja iztur ekstr\u0113mas temperat\u016bras, bet t\u0101 sp\u0113ja saglab\u0101t formu stresa apst\u0101k\u013cos nemazin\u0101s, turkl\u0101t tam ir zems termisk\u0101s izple\u0161an\u0101s koeficients, kas pal\u012bdz samazin\u0101t izm\u0113ru izmai\u0146as temperat\u016bras sv\u0101rst\u012bbu laik\u0101.<\/p>\n
SiC krist\u0101lisk\u0101 strukt\u016bra \u013cauj veidot ar\u012b aizsargp\u0101rkl\u0101jumus, kas pasarg\u0101 to no \u0137\u012bmisk\u0101m reakcij\u0101m, kas var\u0113tu izrais\u012bt degrad\u0101ciju. Pateicoties \u0161ai iztur\u012bbai pret koroziju, SiC ir lieliska materi\u0101la izv\u0113le lietojumiem, kam nepiecie\u0161ama ilgsto\u0161a veiktsp\u0113ja skarb\u0101s darba vid\u0113s, k\u0101 ar\u012b lielas meh\u0101nisk\u0101s slodzes vai spiediena iztur\u012bba.<\/p>\n
Sil\u012bcija karb\u012bds, saukts ar\u012b par korundu vai karborundu, ir neorganisks \u0137\u012bmisks savienojums, kas sast\u0101v no sil\u012bcija un oglek\u013ca un veido platjoslas pusvad\u012bt\u0101jus ar sl\u0101pek\u013ca vai fosfora piedevu n tipa sil\u012bcija karb\u012bdam vai ar bora vai alum\u012bnija piedevu p tipa sil\u012bcija karb\u012bdam.<\/p>\n
Sil\u012bcija karb\u012bds izce\u013cas starp materi\u0101liem, jo t\u0101 Si un C atomu strukt\u016bra ir cie\u0161i sak\u0101rtota, padarot to \u0101rk\u0101rt\u012bgi iztur\u012bgu. T\u0101 ir viena no ciet\u0101kaj\u0101m viel\u0101m uz Zemes, un sil\u012bcija karb\u012bdam piem\u012bt ar\u012b augsta ku\u0161anas temperat\u016bra un izcilas siltumvad\u012btsp\u0113jas \u012bpa\u0161\u012bbas.<\/p>\n
Sil\u012bcija karb\u012bda stingr\u012bba un zemais termisk\u0101s izple\u0161an\u0101s koeficients ir padar\u012bjis to par v\u0113lamu materi\u0101lu teleskopu spogu\u013ciem, piem\u0113ram, H\u0113r\u0161ela kosmosa teleskopa spogu\u013ciem. Citi monokrist\u0101la sil\u012bcija karb\u012bda izmanto\u0161anas veidi ir automobi\u013cu bremzes un saj\u016bgi, keramikas pl\u0101ksnes bru\u0146uvest\u0113s, sint\u0113tisk\u0101 moizan\u012bta ra\u017eo\u0161ana, monokrist\u0101la sil\u012bcija karb\u012bda iev\u0113rojami liel\u0101kais p\u0101rejas dzi\u013cums starp plastisko un trauslo p\u0101reju uz l\u016bzumu, k\u0101 ar\u012b skr\u0101p\u0113jumu morfolo\u0123isk\u0101s \u012bpa\u0161\u012bbas Si un C plak\u0146u apstr\u0101des laik\u0101, veicot FIB SEM anal\u012bzi.<\/p>\n
Silicija karb\u012bda monokrist\u0101lu elektrisk\u0101s \u012bpa\u0161\u012bbas ir biju\u0161as pla\u0161a pasaules m\u0113roga p\u0113t\u012bjumu objekts, jo t\u0101m ir b\u016btiska noz\u012bme augstas veiktsp\u0113jas elektronisko ier\u012b\u010du ar pla\u0161u joslas spraugu rad\u012b\u0161an\u0101.<\/p>\n
Ir izstr\u0101d\u0101ts liels skaits meto\u017eu, lai m\u0113r\u012btu nes\u0113ju koncentr\u0101ciju un pretest\u012bbu SiC pl\u0101ksn\u0113s. Ar \u0161\u012bm raksturo\u0161anas metod\u0113m var noteikt visus taj\u0101s eso\u0161os piemais\u012bjumus. Lai m\u0113r\u012btu \u0161os parametrus simetriski vis\u0101 s\u0101nu vai \u0161\u0137\u0113rsgriezuma laukum\u0101, izmantojot elektrisk\u0101s sken\u0113\u0161anas zondes metodes vai bezkontakta pretest\u012bbas kart\u0113\u0161anas r\u012bkus.<\/p>\n
Sil\u012bcija karb\u012bds (SiC) ir neorganiska cieta viela, ko veido sil\u012bcijs un ogleklis stehiometrisk\u0101 proporcij\u0101, veidojas k\u0101 element\u0101rs savienojums, paz\u012bstams k\u0101 moisan\u012bta d\u0101rgakmens, ko ra\u017eo Lely proces\u0101 un izmanto k\u0101 abraz\u012bvu, k\u0101 ar\u012b izmanto elektroniskaj\u0101s ier\u012bc\u0113s un k\u0101 da\u013cu no elektronisk\u0101s ra\u017eo\u0161anas procesiem. Sil\u012bcija karb\u012bds ir viens no ciet\u0101kajiem dabiskajiem materi\u0101liem ar augst\u0101ku nodilumiztur\u012bbu, iztur\u012bbu un siltumvad\u012btsp\u0113ju sal\u012bdzin\u0101jum\u0101 ar citur sastopamiem l\u012bdz\u012bgiem materi\u0101liem.<\/p>","protected":false},"excerpt":{"rendered":"
Silicon carbide (SiC) is an extremely hard chemical compound of silicon and carbon that occurs naturally as moissanite mineral, though large-scale production began in 1893 for use as an abrasive material and in applications requiring extreme durability such as car brakes and bulletproof vests. Physical Vapor Transport Growth Technology has enabled the production of high …<\/p>\n