Sil\u012bcija karb\u012bds (SiC) ir viens no viegl\u0101kajiem un ciet\u0101kajiem keramikas materi\u0101liem. Tas izce\u013cas ar notur\u012bbu pret nodiluma un nodiluma rad\u012btiem boj\u0101jumiem, iztur\u012bbu pret \u0137\u012bmisko vielu nopl\u016bdi, zemiem termisk\u0101s izple\u0161an\u0101s r\u0101d\u012bt\u0101jiem un pa\u0161sl\u012bp\u0113\u0161anas sp\u0113j\u0101m - \u0161\u012bs \u012bpa\u0161\u012bbas padara SiC par pievilc\u012bgu izv\u0113li.<\/p>\n
SiC pusvad\u012bt\u0101jiem piem\u012bt \u0101rk\u0101rt\u012bgi pla\u0161a joslu atstarpe, kas \u013cauj tiem str\u0101d\u0101t pie augst\u0101kiem spriegumiem un frekvenc\u0113m nek\u0101 standarta sil\u012bcija ier\u012bc\u0113m, padarot tos par ide\u0101lu izv\u0113li izmanto\u0161anai elektromobi\u013cu \u0101tr\u0101s uzl\u0101des un ener\u0123ijas p\u0101rveido\u0161anas lietojumos.<\/p>\n
Sil\u012bcija karb\u012bds (SiC) ir ciets materi\u0101ls ar augstu ku\u0161anas temperat\u016bru, kas ir pla\u0161i pielietojams, pateicoties t\u0101 ciet\u012bbai, stingr\u012bbai, iztur\u012bbai pret koroziju, augstajai stipr\u012bbai, nelielam svaram un pla\u0161am darba temperat\u016bras diapazonam. Turkl\u0101t SiC nodro\u0161ina izcilas siltumvad\u012btsp\u0113jas un elektrisk\u0101s pretest\u012bbas \u012bpa\u0161\u012bbas, kas \u013cauj samazin\u0101t elektrisko transportl\u012bdzek\u013cu energoelektronikas izm\u0113rus un svaru, k\u0101 ar\u012b palielin\u0101t brauk\u0161anas diapazonu, vienlaikus samazinot akumulatoru izmaksas.<\/p>\n
Sil\u012bcija karb\u012bda bl\u012bvums ir atkar\u012bgs no t\u0101 krist\u0101lisk\u0101s strukt\u016bras. Da\u017e\u0101d\u0101m polikrist\u0101lisk\u0101m strukt\u016br\u0101m piem\u012bt at\u0161\u0137ir\u012bgs bl\u012bvums, savuk\u0101rt sint\u0113zes laik\u0101 eso\u0161ie piemais\u012bjumi var main\u012bt ar\u012b \u0161o faktoru. Ar\u012b piedevas vai sa\u0137epin\u0101\u0161anas pal\u012bgl\u012bdzek\u013ci var main\u012bt bl\u012bvumu.<\/p>\n
SiC ir keramikas materi\u0101ls, kas nav oks\u012bds un ko parasti izmanto izstr\u0101d\u0101jumos, kuriem nepiecie\u0161ama augsta iztur\u012bba un veiktsp\u0113ja termiski un meh\u0101niski sare\u017e\u0123\u012bt\u0101s vid\u0113s, tostarp abraz\u012bvu nodilumiztur\u012bg\u0101s deta\u013c\u0101s, karstumiztur\u012bgos un \u0137\u012bmiski iztur\u012bgos keramikas ugunsiztur\u012bgajos materi\u0101los, piem\u0113ram, keramikas un metalur\u0123ijas oder\u0113jumos, k\u0101 ar\u012b elektroniskaj\u0101s ier\u012bc\u0113s, piem\u0113ram, gaismas diod\u0113s (LED) un detektoros, pateicoties to pusvad\u012bt\u0101ju \u012bpa\u0161\u012bb\u0101m.<\/p>\n
Sast\u0101vda\u013cas, kur\u0101m j\u0101darbojas augstsprieguma vid\u0113, aizsardz\u012bbai bie\u017ei izmanto oglek\u013ca nanocaurules, jo to sp\u0113ja iztur\u0113t augstspriegumu pal\u012bdz samazin\u0101t jaudas elektronikas izm\u0113rus, izmaksas un sare\u017e\u0123\u012bt\u012bbu, kas k\u013c\u016bst v\u0113l svar\u012bg\u0101k, jo elektrisko transportl\u012bdzek\u013cu arhitekt\u016bras p\u0101reja uz augst\u0101ku spriegumu \u0101tr\u0101kai uzl\u0101dei un uzlabotai siltuma p\u0101rvald\u012bbai. \u0160\u012b \u012bpa\u0161\u012bba padara oglek\u013ca nanocaurules \u012bpa\u0161i ide\u0101li piem\u0113rotas \u0161im lietojumam.<\/p>\n
Sil\u012bcija karb\u012bds (SiC), sint\u0113tiski ieg\u016bts sil\u012bcija un oglek\u013ca krist\u0101lisks savienojums, ir \u0101rk\u0101rt\u012bgi ciets materi\u0101ls ar lielisk\u0101m siltumvad\u012btsp\u0113jas \u012bpa\u0161\u012bb\u0101m. SiC pielietojums ietver smil\u0161pap\u012bru, grie\u0161anas un sl\u012bp\u0113\u0161anas instrumentus, r\u016bpniecisko kr\u0101\u0161\u0146u un ugunsiztur\u012bgo materi\u0101lu oder\u0113jumu, k\u0101 ar\u012b keramiskos substr\u0101tus, ko izmanto gaismas diod\u0113s; keramiskie substr\u0101ti ir svar\u012bgi ar\u012b LED displeju izgaismo\u0161anai, k\u0101 ar\u012b metalur\u0123ijas, avi\u0101cijas un autob\u016bves nozar\u0113.<\/p>\n
Gan sil\u012bcija nitr\u012bds, gan moisan\u012bts ir karborunda materi\u0101la veidi, kurus var izmantot k\u0101 abraz\u012bvus. Abas \u0161\u0137irnes dabiski sastopamas Arizonas Canyon Diablo meteor\u012bt\u0101; pirmo reizi m\u0101ksl\u012bgi to sintez\u0113ja amerik\u0101\u0146u izgudrot\u0101js Edvards G. A\u010dsons, mekl\u0113jot veidus, k\u0101 ra\u017eot m\u0101ksl\u012bgos dimantus 1891. gad\u0101, un tam tika dots pa\u0161reiz\u0113jais nosaukums; karborunds sav\u0101 nosaukum\u0101 ietver gan sil\u012bcija, gan oglek\u013ca elementus.<\/p>\n
Sil\u012bcija karb\u012bds ir dzelteni, za\u013ci l\u012bdz zilgan\u012bgi melni mirdzo\u0161i krist\u0101li, kas sublim\u0113jas, sadaloties 2700 gr\u0101dos p\u0113c Celsija, ar \u013coti augstu bl\u012bvumu 3,21 g cm-3 un ne\u0161\u0137\u012bst \u016bden\u012b. a-SiC polimorfa krist\u0101lstrukt\u016bra ir heksagon\u0101la, l\u012bdz\u012bga vurc\u012btam, bet beta modifik\u0101cij\u0101m ir cinka blende krist\u0101lstrukt\u016bra, l\u012bdz\u012bga dimantam.<\/p>\n
K\u0101 metodes SiC termisko \u012bpa\u0161\u012bbu nov\u0113rt\u0113\u0161anai ir pieejamas zibspuldzes dif\u016bzijas test\u0113\u0161ana, sken\u0113jo\u0161\u0101 elektronu mikroskopija ar ener\u0123ijas dispersijas spektrometriju un optisk\u0101 emisijas spektroskopija. Turkl\u0101t \u0161im materi\u0101lam var izmantot ar\u012b t\u0101das masas spektrometrijas metodes k\u0101 kv\u0113lspuldzes masas spektrometrija, rentgenstaru fluorescence un l\u0101zera induc\u0113t\u0101 sadal\u012b\u0161an\u0101s spektroskopija.<\/p>\n
Sil\u012bcija karb\u012bds (SiC) ir platjoslas pusvad\u012bt\u0101ju materi\u0101ls, kas noz\u012bm\u0113, ka t\u0101 \u012bpa\u0161\u012bbas \u013cauj tam p\u0101rsl\u0113gties starp elektrovad\u012bt\u0101ja (k\u0101 vara vadi) un izolatora (k\u0101 plastmasas izol\u0101cija \u0161iem vadiem) funkciju. Pateicoties SiC iztur\u012bbai un pla\u0161ajai joslas spraugai, elektrisk\u0101 ener\u0123ija caur to var p\u0101rvietoties daudz efekt\u012bv\u0101k nek\u0101 caur maz\u0101kiem joslas spraugas materi\u0101liem, piem\u0113ram, tradicion\u0101lo pusvad\u012bt\u0101ju sil\u012bciju; t\u0101p\u0113c ar to var darbin\u0101t elektronisk\u0101s ier\u012bces, kas darbojas pie augst\u0101m temperat\u016br\u0101m un sprieguma, neradot iev\u0113rojamus siltuma vai jaudas zudumus; piem\u0113ram, IGBT, bipol\u0101rie tranzistori, \u0160otkija diodes, MOSFET utt.<\/p>\n
SiC tiek izmantots jau gandr\u012bz 200 gadus, tom\u0113r tikai nesen tas ir atrasts pielietojums automobi\u013cu nozar\u0113. SiC piem\u012bt daudzas \u012bpa\u0161\u012bbas, kas to padara ide\u0101li piem\u0113rotu izmanto\u0161anai automobi\u013cos, tostarp t\u0101 iztur\u012bba pret augst\u0101m temperat\u016br\u0101m un spriegumu.<\/p>\n
Automobi\u013cu r\u016bpniec\u012bbas ra\u017eot\u0101ji pak\u0101peniski p\u0101riet no sil\u012bcija par labu SiC, lai uzlabotu elektrisko transportl\u012bdzek\u013cu (EV) akumulatoru vad\u012bbas sist\u0113mu kvalit\u0101ti, uzticam\u012bbu un efektivit\u0101ti. SiC lielisk\u0101 siltumvad\u012btsp\u0113ja un elektrovad\u012btsp\u0113ja \u013cauj samazin\u0101t \u0161o sist\u0113mu akt\u012bv\u0101s dzes\u0113\u0161anas vajadz\u012bbas, t\u0101d\u0113j\u0101di ietaupot izmaksas un svaru.<\/p>\n
Sil\u012bcija karb\u012bds var lepoties ar vienu no augst\u0101kaj\u0101m un visilg\u0101k notur\u012bgaj\u0101m ciet\u012bb\u0101m starp keramikas materi\u0101liem, ierindojot to tre\u0161aj\u0101 viet\u0101 uz Zemes p\u0113c dimanta (jaun\u0101 Mosa ciet\u012bba: 15) un bora karb\u012bda (jaun\u0101 Mosa ciet\u012bba: 13). Pateicoties t\u0101 \u0137\u012bmiskajai inertumam, nodilumiztur\u012bbai un augstajai ku\u0161anas temperat\u016brai, to bez ba\u017e\u0101m var izmantot skarbos vides apst\u0101k\u013cos.<\/p>\n
SiC ir ide\u0101ls materi\u0101ls bru\u0146uvestes lietojumiem, jo tam piem\u012bt sp\u0113c\u012bgas aizsarg\u012bpa\u0161\u012bbas pret liela \u0101truma triecieniem un pla\u0161a joslas sprauga, kas \u013cauj darboties augst\u0101k\u0101s temperat\u016br\u0101s un pie augst\u0101kiem spriegumiem.<\/p>\n
Silicijs un ogleklis, kas savienoti kovalent\u0101s sait\u0113s, nodro\u0161ina \u0161im materi\u0101lam tik augstu ciet\u012bbu, \u013caujot tam iztur\u0113t meh\u0101nisk\u0101s slodzes, kas boj\u0101tu citus materi\u0101lus, piem\u0113ram, alum\u012bnija oks\u012bdu un cirkoniju.<\/p>\n
SiC ciet\u012bbu var iev\u0113rojami palielin\u0101t, ja to p\u0101rkl\u0101j ar epitaksijas graf\u0113nu. Saska\u0146\u0101 ar p\u0113t\u012bjumiem, kuros izmantots dimanta indenteris, pier\u0101d\u012bts, ka SiC, kas p\u0101rkl\u0101ts ar atom\u0101ri pl\u0101nu epitaksisk\u0101 graf\u0113na sl\u0101ni, p\u0113c iespieduma dzi\u013cuma, kas tr\u012bssimt rei\u017eu p\u0101rsniedz t\u0101 biezumu, palielin\u0101s par 30%, t\u0101d\u0113j\u0101di paverot ce\u013cu \u012bpa\u0161i cietiem, bet siltumvad\u0101miem sil\u012bcija karb\u012bda substr\u0101tiem.<\/p>","protected":false},"excerpt":{"rendered":"
Silicon carbide (SiC) is one of the lightest and hardest ceramic materials. It excels at resisting wear-and-tear damage from wear-and-tear, chemical spillage resistance, low thermal expansion rates and self-sharpening capabilities – characteristics which make SiC an attractive choice. SiC semiconductors boast an exceptional wide band gap, enabling them to work at higher voltages and frequencies …<\/p>\n