Silicijs no sil\u012bcija smilt\u012bm apvienojum\u0101 ar ogli no akme\u0146ogl\u0113m ieg\u016bst neparastu materi\u0101lu - sil\u012bcija karb\u012bdu (SiC). SiC substr\u0101ti ir tehnolo\u0123iju att\u012bst\u012bbas virz\u012bt\u0101jsp\u0113ks elektromobi\u013cos, 5G t\u012bklos un citur.<\/p>\n
SiC pl\u0101ksn\u012b\u0161u ra\u017eo\u0161anai ir nepiecie\u0161amas sare\u017e\u0123\u012btas tehnolo\u0123ijas un padzi\u013cin\u0101tas zin\u0101\u0161anas, un ra\u017eot\u0101jiem ir j\u0101cen\u0161as palielin\u0101t ra\u017e\u012bbu un uzticam\u012bbu ra\u017eo\u0161anas proces\u0101.<\/p>\n
Sil\u012bcija karb\u012bds (SiC) ir \u0101rk\u0101rt\u012bgi ciets, iztur\u012bgs bezoks\u012bda keramikas materi\u0101ls ar vair\u0101k\u0101m priek\u0161roc\u012bb\u0101m. T\u0101s ir iztur\u012bba pret koroziju, nodilumu un nodilumu, iztur\u012bbas un stingr\u012bbas saglab\u0101\u0161ana augst\u0101s temperat\u016br\u0101s, laba siltumvad\u012btsp\u0113ja un zems termisk\u0101s izple\u0161an\u0101s koeficients - \u012bpa\u0161\u012bbas, kas padara SiC par lielisku substr\u0101ta materi\u0101lu augstas veiktsp\u0113jas ener\u0123ijas pusvad\u012bt\u0101ju ier\u012bc\u0113m.<\/p>\n
SiC ir univers\u0101ls pusvad\u012bt\u0101ju b\u0101zes materi\u0101ls, ko var le\u0123\u0113t ar sl\u0101pekli un fosforu, veidojot n tipa pusvad\u012bt\u0101ju, vai beriliju, boru, alum\u012bniju un galliju, veidojot p tipa pusvad\u012bt\u0101ju. Alfas sil\u012bcija karb\u012bda (alfa SiC) krist\u0101lisko strukt\u016bru, kas ir l\u012bdz\u012bga Wurtzite krist\u0101la strukt\u016brai, bie\u017ei izv\u0113las automobi\u013cu invertoriem, jo t\u0101 \u013cauj samazin\u0101t ra\u017eo\u0161anas procesu temperat\u016bru, vienlaikus nodro\u0161inot elektromobi\u013cu invertoru veiktsp\u0113jas un uzticam\u012bbas pras\u012bbas.<\/p>\n
SiC ir efekt\u012bva sil\u012bcija alternat\u012bva, kam ir liel\u0101ka joslas sprauga un zem\u0101ka iesl\u0113g\u0161anas pretest\u012bba, kas nodro\u0161ina liel\u0101ku p\u0101rsl\u0113g\u0161an\u0101s \u0101trumu un augst\u0101ku efektivit\u0101ti - abi \u0161ie komponenti ir b\u016btiski m\u016bsdienu energoelektronik\u0101. Turkl\u0101t SiC izce\u013cas ar lielisk\u0101m elektriskaj\u0101m \u012bpa\u0161\u012bb\u0101m un ir \u013coti iztur\u012bgs pret elektromagn\u0113tiskiem trauc\u0113jumiem, kas cit\u0101di var\u0113tu saboj\u0101t t\u0101 virsmu.<\/p>\n
Sil\u012bcija karb\u012bds nodro\u0161ina izcilu siltumvad\u012btsp\u0113ju, padarot to par lielisku materi\u0101lu izv\u0113li lieljaudas\/augstas frekvences ier\u012bc\u0113m. Turkl\u0101t \u0161\u012b \u012bpa\u0161\u012bba, k\u0101 ar\u012b materi\u0101la augst\u0101 ciet\u012bba un pla\u0161ais joslas spraugas interv\u0101ls \u013cauj sil\u012bcija karb\u012bdam iztur\u0113t augst\u0101ku spriegumu un temperat\u016bru nek\u0101 tradicion\u0101lie pusvad\u012bt\u0101ju materi\u0101li.<\/p>\n
SiC termisk\u0101s \u012bpa\u0161\u012bbas galvenok\u0101rt nosaka t\u0101 atomu strukt\u016bra. Tam ir kubiska vien\u0161\u016bnas \u0161\u016bna ar sil\u012bcija un oglek\u013ca sl\u0101\u0146iem, kas sak\u0101rtoti p\u0101rmai\u0146us gar t\u0101 c asi, un tas nodro\u0161ina izotropus elektriskos un termiskos raksturlielumus, kas ir vien\u0101di visos virzienos. Turkl\u0101t SiC var ra\u017eot ar\u012b da\u017e\u0101dos politipos atkar\u012bb\u0101 no konkr\u0113t\u0101 lietojuma vajadz\u012bb\u0101m; tas, kuru politipu izv\u0113laties, ir atkar\u012bgs tikai no t\u0101, k\u0101di politipi tiek ra\u017eoti.<\/p>\n
SiC izce\u013cas k\u0101 alternat\u012bvs materi\u0101ls, pateicoties t\u0101 pla\u0161ajam joslas spraugas laukumam, kas nodro\u0161ina liel\u0101ku jaudas bl\u012bvumu un liel\u0101ku p\u0101rsl\u0113g\u0161an\u0101s \u0101trumu, k\u0101 ar\u012b zem\u0101ku iesl\u0113g\u0161anas pretest\u012bbu un energoefektivit\u0101ti - \u012bpa\u0161\u012bbas, kas padara to ide\u0101li piem\u0113rotu augstsprieguma ier\u012bc\u0113m, piem\u0113ram, energoelektronikai.<\/p>\n
Augstas kvalit\u0101tes sil\u012bcija karb\u012bda pl\u0101ksn\u012b\u0161u ra\u017eo\u0161ana bie\u017ei vien ir sare\u017e\u0123\u012btas atomu strukt\u016bras d\u0113\u013c, turkl\u0101t grie\u0161anas un virsmas apdares procesos bie\u017ei rodas defekti - probl\u0113ma, kas var kav\u0113t ier\u012bces veiktsp\u0113ju. Pureon pla\u0161\u0101 pusvad\u012bt\u0101ju ra\u017eo\u0161anas v\u0113sture un pieredze sil\u012bcija karb\u012bda pl\u0101ksn\u012b\u0161u ra\u017eo\u0161an\u0101 ir \u013c\u0101vusi mums pied\u0101v\u0101t efekt\u012bvus risin\u0101jumus, kas \u013cauj veiksm\u012bgi p\u0101rvar\u0113t \u0161\u0101dus \u0161\u0137\u0113r\u0161\u013cus.<\/p>\n
Sil\u012bcija karb\u012bda pl\u0101ksn\u012btes var iztur\u0113t vair\u0101k nek\u0101 divreiz liel\u0101ku sadal\u012b\u0161an\u0101s spriegumu nek\u0101 tradicion\u0101lie sil\u012bcija pusvad\u012bt\u0101ji, jo to pla\u0161\u0101 joslas sprauga \u013cauj elektroniem viegl\u0101k p\u0101rvietoties starp valences joslu un vad\u012btsp\u0113jas joslu. \u0160\u012b \u012bpa\u0161\u012bba padara sil\u012bcija karb\u012bda pl\u0101tnes piem\u0113rotas elektronikas un ener\u0123ijas lietojumiem, jo nodro\u0161ina \u0101tr\u0101ku p\u0101rsl\u0113g\u0161anos, maz\u0101kas ier\u012bces un zem\u0101kas ra\u017eo\u0161anas izmaksas.<\/p>\n
Sil\u012bcija (Si) ener\u0123ijas starp\u012bba ir no 1,12 eV l\u012bdz 3,26 eV; SiC ir v\u0113l pla\u0161\u0101ka joslas sprauga - aptuveni 3,26 eV, t\u0101p\u0113c SiC p\u0101rsl\u0113dzas daudz \u0101tr\u0101k un samazina ier\u012bces izm\u0113ru, \u013caujot vienlaic\u012bgi p\u0101rnest vair\u0101k ener\u0123ijas.<\/p>\n
Att\u012bstoties 5G, sil\u012bcija karb\u012bds nodro\u0161ina jaunas bezvadu mikrosh\u0113mas ar liel\u0101ku joslas platumu un datu p\u0101rraides jaudu nek\u0101 jebkad agr\u0101k. Ir j\u0101izmanto jaud\u012bg\u0101ki tranzistori, un sil\u012bcija karb\u012bda \u0101trgaitas komut\u0101cija padara to ide\u0101li piem\u0113rotu \u0161im uzdevumam.<\/p>\n
Silicija karb\u012bda citas \u012bpa\u0161\u012bbas padara to ide\u0101li piem\u0113rotu \u0101trgaitas, augsttemperat\u016bras un augstsprieguma lietojumiem, tostarp iztur\u012bbu pret termiskiem triecieniem. Straujas temperat\u016bras sv\u0101rst\u012bbas izraisa da\u017e\u0101du deta\u013cu izple\u0161anos un sarau\u0161anos ar at\u0161\u0137ir\u012bgu \u0101trumu, izraisot plais\u0101\u0161anu vai boj\u0101jumus, bet sil\u012bcija karb\u012bds paliek neskarts, jo tam ir zemas termisk\u0101s izple\u0161an\u0101s \u012bpa\u0161\u012bbas.<\/p>\n
Sil\u012bcija karb\u012bds labi iztur augstas temperat\u016bras un sprieguma l\u012bme\u0146us, t\u0101p\u0113c tas ir lielisks materi\u0101ls energoelektronikas lietojumiem. Tas sp\u0113j iztur\u0113t augst\u0101ku sadal\u012b\u0161an\u0101s spriegumu nek\u0101 sil\u012bcijs un zem\u0101kus komut\u0101cijas zudumus augst\u0101s frekvenc\u0113s, savuk\u0101rt t\u0101 pla\u0161ais joslas spraugas diapazons \u013cauj darboties pla\u0161\u0101k\u0101 temperat\u016bras diapazon\u0101.<\/p>\n
SiC b\u0101z\u0113tas ier\u012bces ir revolucioniz\u0113ju\u0161as energoelektroniku, \u013caujot izveidot maz\u0101kas un energoefekt\u012bv\u0101kas ier\u012bces. To augst\u0101 ON pretest\u012bba un sp\u0113ja iztur\u0113t augstus sprieguma l\u012bme\u0146us padara t\u0101s lieliski piem\u0113rotas elektrotransportl\u012bdzek\u013ciem un atjaunojam\u0101s ener\u0123ijas sist\u0113m\u0101m.<\/p>\n
Sil\u012bcija karb\u012bda iztur\u012bba un iztur\u012bba \u013cauj tam iztur\u0113t ekstr\u0113mus apst\u0101k\u013cus, piem\u0113ram, augstu temperat\u016bru vai koroz\u012bvu vidi, k\u0101 ar\u012b veidot karstumiztur\u012bgus komponentus elektrotehnikas lietojumiem, piem\u0113ram, gaismas diod\u0113m (LED) vai detektoriem. Turkl\u0101t t\u0101 iztur\u012bba padara to piem\u0113rotu kr\u0101sns m\u0113bel\u0113m, piem\u0113ram, kurtuvju pl\u0101ksn\u0113m, rekuperatoru caurul\u0113m, st\u016bm\u0113jpl\u0101tn\u0113m un sl\u012bdceli\u0146iem.<\/p>\n
Lai uzlabotu SiC elektrisk\u0101s \u012bpa\u0161\u012bbas, to var le\u0123\u0113t ar da\u017e\u0101diem piemais\u012bjumiem, t\u0101d\u0113j\u0101di ieg\u016bstot P tipa pusvad\u012bt\u0101jus, ja tos le\u0123\u0113 ar alum\u012bniju, boru vai galliju; no otras puses, le\u0123\u0113jot ar sl\u0101pekli un fosforu, ieg\u016bst N tipa pusvad\u012bt\u0101jus, kas \u013cauj izveidot sare\u017e\u0123\u012btas pusvad\u012bt\u0101ju ier\u012bces, piem\u0113ram, \u0160otkija barjeras diodes vai MOSFET ar samazin\u0101tu iesl\u0113g\u0161an\u0101s pretest\u012bbu.<\/p>","protected":false},"excerpt":{"rendered":"
Silicon from silica sand combined with carbon from coal yields an extraordinary material: silicon carbide (SiC). SiC substrates are driving technological advancement in EVs, 5G networks and more. Manufacturing SiC wafers requires sophisticated technologies and in-depth expertise, and manufacturers have to strive for increased yields and reliability during production processes. Hardness Silicon Carbide (SiC) is …<\/p>\n