{"id":109,"date":"2024-04-06T11:11:01","date_gmt":"2024-04-06T03:11:01","guid":{"rendered":"https:\/\/2024yy.com\/?p=109"},"modified":"2024-04-06T11:11:02","modified_gmt":"2024-04-06T03:11:02","slug":"silicon-carbide-chips","status":"publish","type":"post","link":"https:\/\/2024yy.com\/lv\/silicon-carbide-chips\/","title":{"rendered":"Sil\u012bcija karb\u012bda mikrosh\u0113mas"},"content":{"rendered":"

Sil\u012bcija karb\u012bda mikrosh\u0113mas, paz\u012bstamas ar\u012b k\u0101 karborunds (vai vienk\u0101r\u0161i SiC), ir piedz\u012bvoju\u0161as neticamas p\u0101rmai\u0146as energoelektronikas nozar\u0113. L\u012bdz\u012bgi aizsprostu sien\u0101m, kas atveras un aizveras, kad nepiecie\u0161ams, sil\u012bcija karb\u012bda mikrosh\u0113mas pieg\u0101d\u0101 str\u0101vu k\u0101 nep\u0101rtraukts ener\u0123ijas avots energoelektronikas lietojumiem.<\/p>\n

Elektrotransportl\u012bdzek\u013cu akumulatoru tehnolo\u0123ij\u0101m b\u016btu j\u0101palielina nobrauk\u0161anas att\u0101lums ar vienu uzl\u0101di, j\u0101samazina uzl\u0101des laiks un j\u0101uzlabo kop\u0113j\u0101 efektivit\u0101te.<\/p>\n

1. Augsts sadal\u012b\u0161an\u0101s spriegums<\/h2>\n

SiC mikrosh\u0113m\u0101m piem\u012bt dielektrisk\u0101 sadal\u012bjuma elektrisk\u0101 lauka stiprums, kas ir aptuveni 10 reizes liel\u0101ks nek\u0101 sil\u012bcija, nodro\u0161inot t\u0101m \u013coti augstu sadal\u012bjuma spriegumu 600 V vai pat t\u016bksto\u0161iem voltu un t\u0101d\u0113j\u0101di samazinot pretest\u012bbas komponentus ener\u0123ijas ier\u012bc\u0113s.<\/p>\n

T\u0101di platjoslas materi\u0101li k\u0101 sil\u012bcija karb\u012bds ir izr\u0101d\u012bju\u0161ies nenov\u0113rt\u0113jami, ja tos izmanto energoelektronikas lietojumos, piem\u0113ram, sauszemes elektriskajos transportl\u012bdzek\u013cos un kosmosa izp\u0113tes zond\u0113s un instrumentos, kur sil\u012bcija pusvad\u012bt\u0101jiem ir j\u0101iztur skarbas vides ar \u013coti augstu spriegumu. \u0160\u012b priek\u0161roc\u012bba ir k\u013cuvusi v\u0113l svar\u012bg\u0101ka, jo platjoslas materi\u0101li, piem\u0113ram, sil\u012bcija karb\u012bds, arvien vair\u0101k tiek izmantoti sil\u012bcija pusvad\u012bt\u0101ju aizst\u0101\u0161anai.<\/p>\n

Sil\u012bcija karb\u012bda augstais p\u0101rr\u0101vuma spriegums \u013cauj projekt\u0113t maz\u0101kas ier\u012bces, nebaidoties no katastrof\u0101las k\u013c\u016bmes, kas rodas, p\u0101r\u0101k daudz p\u0101rsliecinot nesader\u012bgu sil\u012bcija pusvad\u012bt\u0101ju ier\u012bci, t\u0101d\u0113j\u0101di pan\u0101kot maz\u0101kus jaudas zudumus \u0137\u0113d\u0113s un maz\u0101kus komponentu izm\u0113rus.<\/p>\n

Sil\u012bcija karb\u012bda sadal\u012b\u0161an\u0101s spriegums ir atkar\u012bgs no oglek\u013ca vakan\u010du koncentr\u0101cijas, ko var kontrol\u0113t, izmantojot oglek\u013ca jonu implant\u0101ciju, kam seko termisk\u0101 oksid\u0113\u0161ana 1500-1700 gr\u0101dos p\u0113c Celsija, vai Ar atlaidin\u0101\u0161anu un termisko oksid\u0113\u0161anu 1500-1770 gr\u0101du temperat\u016br\u0101. \u0160is process nodro\u0161ina, ka oglek\u013ca vakan\u010du bl\u012bvums ier\u012bc\u0113s ir pietiekami zems, lai nodro\u0161in\u0101tu ilgu nes\u0113ju kalpo\u0161anas laiku un augstu sadal\u012b\u0161an\u0101s spriegumu.<\/p>\n

2. Augsta siltuma vad\u012btsp\u0113ja<\/h2>\n

Sil\u012bcija karb\u012bds ir viens no ciet\u0101kajiem zin\u0101majiem materi\u0101liem ar izcilu iztur\u012bbu pret koroziju, kas \u013cauj tam iztur\u0113t temperat\u016bru l\u012bdz pat 1400 gr\u0101diem p\u0113c Celsija. Pateicoties t\u0101 iztur\u012bbai, sil\u012bcija karb\u012bdu izmanto automobi\u013cu bremz\u0113s un saj\u016bgos, k\u0101 ar\u012b lo\u017eu necaurlaid\u012bg\u0101s vest\u0113s; turkl\u0101t no \u0161\u012b materi\u0101la ra\u017eo abraz\u012bvus materi\u0101lus un pusvad\u012bt\u0101jus.<\/p>\n

Sil\u012bcija karb\u012bda pusvad\u012bt\u0101ji apstr\u0101d\u0101 elektroener\u0123iju daudz efekt\u012bv\u0101k nek\u0101 to tradicion\u0101lie analogi da\u017eos galvenajos lietojumos, tostarp \u0160otkija diod\u0113s (taisngrie\u017ei baro\u0161anas avotos) un FET\/MOSFET (tranzistori).<\/p>\n

Sil\u012bcija karb\u012bda mikrosh\u0113mas sp\u0113j iztur\u0113t augst\u0101kas darba temperat\u016bras, t\u0101p\u0113c t\u0101s ir \u012bpa\u0161i piem\u0113rotas elektrisko transportl\u012bdzek\u013cu ra\u017eot\u0101jiem. To sp\u0113ja kontrol\u0113t temperat\u016bru samazina atkar\u012bbu no akt\u012bv\u0101m dzes\u0113\u0161anas sist\u0113m\u0101m, kas palielina svaru un izmaksas, palielinot brauk\u0161anas diapazonu un uzl\u0101des laiku.<\/p>\n

3. Augsts jaudas bl\u012bvums<\/h2>\n

Sil\u012bcija karb\u012bds ir intri\u0123\u0113jo\u0161a fizik\u0101lo un elektronisko \u012bpa\u0161\u012bbu kombin\u0101cija. T\u012br\u0101 veid\u0101 sil\u012bcija karb\u012bds ir elektriskais izolators, tom\u0113r, kontrol\u0113ti pievienojot piemais\u012bjumus, tas var k\u013c\u016bt par P vai N tipa pusvad\u012bt\u0101ju materi\u0101lu. P tipa ier\u012bces var izveidot, pievienojot alum\u012bnija, bora, gallija vai sl\u0101pek\u013ca piemais\u012bjumus; N tipa ier\u012bces ar sl\u0101pek\u013ca un fosfora piemais\u012bjumiem var izveidot N tipa ier\u012bces - vai pat to var dop\u0113t, lai ieg\u016btu supravad\u012btsp\u0113ju!<\/p>\n

Vald\u012bbu spiediens samazin\u0101t emisijas un pieaugo\u0161\u0101 elektrisko transportl\u012bdzek\u013cu popularit\u0101te ir rad\u012bjusi strauju piepras\u012bjuma pieaugumu p\u0113c ener\u0123ijas komponentiem, kas var darboties ar augstu spriegumu, kas ir veicin\u0101jis sil\u012bcija karb\u012bda un platjoslas materi\u0101lu, piem\u0113ram, gallija nitr\u012bda, izmanto\u0161anas pieaugumu.<\/p>\n

Sil\u012bcija karb\u012bda mikrosh\u0113mas nodro\u0161ina zem\u0101ku sprieguma pretest\u012bbu nek\u0101 to sil\u012bcija analogi, kas \u013cauj rad\u012bt maz\u0101kas ier\u012bces ar samazin\u0101tu iek\u0101rtu svaru un ener\u0123ijas zudumiem. Piem\u0113rojot dzelzce\u013ca tranz\u012bta lietojumiem, efekt\u012bv\u0101ku ier\u012b\u010du ar maz\u0101ku izm\u0113riem izmanto\u0161ana var pal\u012bdz\u0113t palielin\u0101t ener\u0123ijas bl\u012bvumu, vienlaikus palielinot kravnes\u012bbu un samazinot ekspluat\u0101cijas izmaksas. Mitsubishi Electric nesen izstr\u0101d\u0101ja 6,5 kV piln\u012bb\u0101 SiC jaudas pusvad\u012bt\u0101ju moduli ar, k\u0101 apgalvo, pasaul\u0113 augst\u0101ko jaudas bl\u012bvumu gan sprieguma, gan str\u0101vas nomin\u0101laj\u0101 l\u012bmen\u012b.<\/p>\n

4. Augstas temperat\u016bras stabilit\u0101te<\/h2>\n

Sil\u012bcija karb\u012bda pusvad\u012bt\u0101ju kalpo\u0161anas laiks ir pagarin\u0101ts 500C temperat\u016br\u0101, t\u0101p\u0113c tie ir piem\u0113roti saules ener\u0123ijas lietojumiem, k\u0101 ar\u012b ener\u0123ijas ier\u012bc\u0113m, kur\u0101m j\u0101iztur augst\u0101kas temperat\u016bras nek\u0101 sil\u012bcijam. Sal\u012bdzin\u0101jum\u0101 ar sil\u012bciju sil\u012bcija karb\u012bds ar\u012b lab\u0101k iztur augst\u0101ku temperat\u016bru.<\/p>\n

Sil\u012bcija karb\u012bda piejauk\u0161ana ar alum\u012bniju un boru rada P tipa pusvad\u012bt\u0101jus, savuk\u0101rt sl\u0101pek\u013ca un fosfora piejauk\u0161ana rada N tipa sil\u012bcija karb\u012bdus.<\/p>\n

Sil\u012bcija karb\u012bda tranzistoriem un FET ir pla\u0161a aizliegt\u0101 josla un augsts kritiskais sadal\u012b\u0161an\u0101s elektriskais lauks, t\u0101p\u0113c tie ir labi piem\u0113roti darbam ar augstiem spriegumiem ar samazin\u0101tu iesl\u0113gt\u0101 st\u0101vok\u013ca pretest\u012bbu un komut\u0101cijas zudumiem. Turkl\u0101t to mazie izm\u0113ri sal\u012bdzin\u0101jum\u0101 ar IGBT vai bipol\u0101riem tranzistoriem nodro\u0161ina daudz lab\u0101ku temperat\u016bras toleranci, k\u0101 ar\u012b liel\u0101ku uzticam\u012bbu pla\u0161\u0101k\u0101 temperat\u016bras diapazon\u0101.<\/p>\n

Investori ir paman\u012bju\u0161i izaugsmes potenci\u0101lu, ko pied\u0101v\u0101 sil\u012bcija karb\u012bda mikrosh\u0113mu ra\u017eot\u0101ji, piem\u0113ram, Infineon, ON Semiconductor un Wolfspeed. To ra\u017eotie ener\u0123ijas pusvad\u012bt\u0101ji, cita starp\u0101, tiek izmantoti elektriskajos transportl\u012bdzek\u013cos, saules ener\u0123ijas p\u0101rveid\u0113 un 5G bezvadu tehnolo\u0123ij\u0101s.<\/p>\n

5. Augsta energoefektivit\u0101te<\/h2>\n

Sil\u012bcija karb\u012bda mikrosh\u0113mas nodro\u0161ina augst\u0101ku veiktsp\u0113ju nek\u0101 tradicion\u0101l\u0101s sil\u012bcija ier\u012bces, piem\u0113ram, IGBT un bipol\u0101rie tranzistori, piem\u0113ram, IGBT. Tie darbojas dro\u0161\u0101k pie augst\u0101kiem p\u0101rr\u0101vuma spriegumiem, vienlaikus tiem ir maz\u0101ka iesl\u0113g\u0161an\u0101s pretest\u012bba un komut\u0101cijas zudumi.<\/p>\n

\u0160\u012bs priek\u0161roc\u012bbas pal\u012bdz uz SiC balst\u012bt\u0101m konstrukcij\u0101m samazin\u0101t kop\u0113j\u0101s sist\u0113mas izmaksas, kas ir b\u016btiski energoefekt\u012bvu tehnolo\u0123iju pla\u0161\u0101kai ievie\u0161anai. SiC konstrukcijas var pan\u0101kt \u0161o ietaup\u012bjumu, pateicoties maz\u0101kam sist\u0113mas izm\u0113ram un zem\u0101k\u0101m dzes\u0113\u0161anas, pas\u012bvo komponentu un vadu izmaks\u0101m.<\/p>\n

Sil\u012bcija karb\u012bda unik\u0101l\u0101s \u012bpa\u0161\u012bbas pal\u012bdz rad\u012bt tehnolo\u0123ijas, kas main\u012bs m\u016bsu n\u0101kotni, jo \u012bpa\u0161i, virzoties uz ekonomiku, kuras neto emisijas ir nulle. Piem\u0113ram, Wolfspeed ener\u0123ijas pusvad\u012bt\u0101ji var palielin\u0101t elektrisko transportl\u012bdzek\u013cu efektivit\u0101ti par 10%, vienlaikus pal\u012bdzot akumulatoriem uzl\u0101d\u0113ties 30% \u0101tr\u0101k.<\/p>\n

Sil\u012bcija karb\u012bda ener\u0123ijas mikrosh\u0113mas pal\u012bdz pasaulei paveikt vair\u0101k ar maz\u0101ku ener\u0123ijas pat\u0113ri\u0146u, \u013caujot mums turpin\u0101t dz\u012bvot savu ierasto dz\u012bvi. Tie\u0161i tas padara \u0161o tehnolo\u0123iju tik aizraujo\u0161u - t\u0101s nenoliedzam\u0101s priek\u0161roc\u012bbas strauji virza to uz pla\u0161u izplat\u012bbu - aizraujo\u0161s laiks, lai b\u016btu ener\u0123ijas pusvad\u012bt\u0101ju tehnolo\u0123ijas pionieris!<\/p>","protected":false},"excerpt":{"rendered":"

Silicon carbide chips, also known as carborundum (or simply SiC), have undergone an incredible transformation within the power electronics industry. Like dam walls that open and close when necessary, silicon carbide chips deliver current like an uninterrupted source of power to power electronics applications. Electric vehicle battery technologies should increase driving range per charge, reduce …<\/p>\n

Sil\u012bcija karb\u012bda mikrosh\u0113mas<\/span> Las\u012bt vair\u0101k \"<\/a><\/p>","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"","footnotes":""},"categories":[2],"tags":[],"class_list":["post-109","post","type-post","status-publish","format-standard","hentry","category-product-related"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/2024yy.com\/lv\/wp-json\/wp\/v2\/posts\/109","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/2024yy.com\/lv\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/2024yy.com\/lv\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/2024yy.com\/lv\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/2024yy.com\/lv\/wp-json\/wp\/v2\/comments?post=109"}],"version-history":[{"count":1,"href":"https:\/\/2024yy.com\/lv\/wp-json\/wp\/v2\/posts\/109\/revisions"}],"predecessor-version":[{"id":110,"href":"https:\/\/2024yy.com\/lv\/wp-json\/wp\/v2\/posts\/109\/revisions\/110"}],"wp:attachment":[{"href":"https:\/\/2024yy.com\/lv\/wp-json\/wp\/v2\/media?parent=109"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/2024yy.com\/lv\/wp-json\/wp\/v2\/categories?post=109"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/2024yy.com\/lv\/wp-json\/wp\/v2\/tags?post=109"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}