Silicon Carbide Schottky Diode

Silicon carbide schottky diodes offer an alternative to conventional silicon devices, boasting lower forward voltage drops and greater operating temperatures tolerance, in addition to boasting high reverse breakdown voltages and providing superior surge current capability than regular silicon models. Wide band gap devices can be utilized in hard-switching applications like electric vehicle (EV) charging stations, …

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Silicon Carbide Is Plotted to Power Everything From Electric Vehicles and Fast Chargers to Renewable Energy Capture and Storage

With 36 years of experience working with silicon carbide, Cree/Wolfspeed believes it has the knowledge and capabilities needed to power everything from electric vehicles and fast chargers, 5G wireless infrastructure and renewable energy capture and storage applications. The Company boasts an expansive opportunity pipeline and is rapidly increasing capacity by opening new fabs and facilities, …

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Silicon Carbide Armor Saves Lives

Silicon carbide armor has been praised for saving lives during terrorist attacks, mass shootings and other high-risk situations. Due to its unique atomic structure and energy absorption properties, this material makes an excellent shield against projectiles that could otherwise strike at personnel. Silicon carbide has emerged as an attractive option due to its superior multi-hit …

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What Is Silicon Carbide Electrical Conductivity?

Silicon carbide (SiC) is an intermetallic solid that lies somewhere between metals (which conduct electricity) and insulators, with wide band gaps and high electron mobility, making it an attractive material choice for power electronics applications. Silicon’s ability to resist chemical attack at high temperatures and its strength across a broad temperature range make it ideal …

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Advantages of Silicon Carbide MOSFETs

Wide bandgap power semiconductor devices such as silicon carbide MOSFETs have become an increasingly popular component in electronic circuit designs, as their superior performance over conventional silicon-based power semiconductors make them attractive solutions. MOSFETs consist of three terminals known as source, drain, and gate. Applying positive voltage to the gate creates an electric field which …

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Silīcija karbīda izturība un siltumvadītspēja

Silīcija karbīds ir ārkārtīgi cieta, kristāliska keramika ar izcilu izturību un siltumvadītspēju, kas spēj izturēt augstas temperatūras bez termiskās izplešanās un ķīmiskās stabilitātes. Nesen mēs ziņojām par rekordlielu izotropisku istabas temperatūras fona kristāla siltumvadītspējas (k) vērtību vafeļu mēroga 3C-SiC kristālos, kas ir lielāki par istabas temperatūru; mūsu rādītājs bija par vairāk nekā 50% augstāks ...

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