Silicon carbide semiconductors (SiCs) can transform the performance and efficiency of electric vehicles (EVs). Replacing silicon devices with SiC devices increases power density and efficiency significantly.
Additionally, they can withstand voltage spikes caused by fast charging and regenerative braking which decrease battery capacity and ultimately result in early failure.
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Silicon carbide (SiC) semiconductors are revolutionizing EV power electronics. When compared with silicon semiconductors, SiC devices offer higher breakdown voltage, faster switching speeds, lower on resistance and superior thermal conductivity – benefits which translate into reduced energy losses and compact power conversion systems with smaller energy losses for greater driving range and quicker charging times for EVs.
SiC is an ideal material to serve as the anode in high-voltage applications such as electric vehicles (EVs). Its low thermal expansion and chemical inertness help create a stable Solid Electrolyte Interphase (SEI), essential to battery safety and lifespan. Furthermore, SiC’s high electrical conductivity allows it to swiftly transfer Li+ ions between anode and cathode battery cells for quick charge-discharge cycles.
However, silicon anodes must also be strong enough to withstand repeated cycling of high voltages. Engineers can dope silicon with carbon atoms to increase its mechanical strength and stability while still offering good electrical conductivity – doping is particularly effective with porous silicon carbide (p-SiC) offering 300-460 Gpa Young’s modulus and conductivity of 0.11 O.m at 200 degC while composites with graphitic or amorphous carbon dopants such as graphitic or amorphous carbon dopants further improving cycle performance by constraining SEI growth or increasing capacity fade [44].
SiC is becoming an increasingly attractive material for high-voltage power devices such as diodes and MOSFETs due to its ability to reduce converter size and weight while increasing efficiency. As electric vehicles (EVs) make the transition from 400 V battery systems to 800 V battery systems, increasing efficiency of converters that drive traction motors and OBCs is critical in order to maximize battery capacity and extend range.
Power converters constructed using SiC semiconductors have shown remarkable gains, enabling EV drivers to extend the range of their vehicles without extended charging cycles and reduce fossil fuel dependence. Furthermore, SiC components extend EV lifespan by protecting from high voltage events like regenerative braking and DC fast charging that may damage components over time.
Power Electronics
Silicon carbide power electronics play an essential role in the performance and efficiency of electric vehicles (EVs). Silicon carbide has emerged as an innovative solution for high-voltage applications like on-board chargers (OBCs) and traction inverters found on plug-in hybrid and fully electric vehicles, boasting greater breakdown voltage, faster switching speeds, and superior thermal performance than their silicon-based counterparts.
OBCs convert AC power to DC for storage in batteries, while traction inverters convert DC from the battery into AC for motor operation. Thanks to SiC semiconductor technology’s efficiency and power-delivery capability, OBCs and inverters have become smaller while still producing equal levels of energy efficiency, making EVs smaller while improving weight and cost reduction as well as driving range.
Silicon carbide’s wider bandgap allows faster switching, with fabrication using less material resulting in thinner devices that use up less power for energy conversion and use. Furthermore, its higher thermal conductivity enables more effective heat dissipation reducing system complexity while decreasing weight.
Silicon carbide’s ability to withstand higher operating temperatures increases its reliability for use in electric vehicle power components that must operate under challenging conditions, including elevated voltage and temperature levels. Furthermore, its higher breakdown voltage enables thinner materials and lighter construction methods which further reduce system weight while providing more energy delivery capacity.
Silicon carbide semiconductors’ faster switching speeds enable traction inverters to charge batteries more quickly, enabling electric vehicles (EVs) to travel farther on a single charge – further increasing usability and alleviating range anxiety among consumers. Furthermore, this technology facilitates scaling infrastructure for EV charging infrastructure.
Longer term, silicon carbide’s power density and switching efficiency will allow electric vehicles to travel further on one charge, making them a more attractive alternative than internal combustion engine vehicles and speeding the transition towards greener transportation solutions. This could speed consumer adoption of greener transportation.
Green Energy
As more people embrace electric vehicles, manufacturers are pushing the limits of power density and efficiency to achieve longer driving range and higher performance. Silicon carbide semiconductors are an integral component of these systems, offering key benefits such as resistance against high voltage surges that occur during regenerative braking or fast charging cycles, efficient DC/DC conversion capabilities and reduced cooling requirements for efficient DC/DC conversion processes.
SiC’s wide bandgap, three times wider than that of traditional silicon, enables it to withstand 10 times higher peak voltages and currents than silicon does, making it well suited for energy generation and storage devices that operate at high voltages and currents. Chemically inert and thermal shock resistant, SiC can withstand repeated high-voltage discharges with minimal degradation while protecting itself from radiation exposure for long-term operation while offering exceptional radiation hardness protection.
Silicon carbide’s use in lithium ion batteries is particularly notable. Silicon carbide makes an excellent anode material because of its higher energy density than graphite or other materials; an 18650 cell made with silicon carbide boasts approximately 3.4 Ah per gram capacity and charges twice as quickly compared with traditional graphite batteries.
SiC technology enhances the efficiency of power electronics that control an electric vehicle (EV). Faster switching speeds reduce component size and cost while simultaneously increasing system efficiency and reliability – something especially crucial for battery charging circuits in an EV, where fast yet safe charging and discharging must take place.
Silicon carbide has also led the charge in renewable energy generation and storage applications such as solar inverters, wind turbine converters and grid-tied energy storage systems. Its efficiency and reliability enable businesses to lower operating costs, minimize maintenance and downtime costs as well as extend equipment lifespan in extreme environmental conditions.
Wolfspeed silicon carbide technology is creating the next wave of sustainable energy solutions that are more energy-efficient and power dense than ever. Join us and create the future of sustainable energy!
Automotive
Silicon Carbide (SiC) semiconductors are revolutionizing power electronics technology for electric vehicles (EVs), projected to account for about 50% of global semiconductor sales by 2027 according to Yole Developpement. SiC extends driving range per charge while decreasing charging times and improving power efficiency; its heat loss reduction properties contribute towards keeping components cool and contributing towards sleeker designs in EVs.
SiC-based technology in traction inverters and onboard chargers (OBCs) is an integral element of electric vehicle (EV) growth, not only increasing overall energy density and weight reduction but also offering fast charging capabilities to help ease range anxiety for consumers and make EVs more accessible to a larger segment of society.
Automotive applications demand high-performance switching devices that can withstand high currents and temperatures for an extended period. Silicon carbide (SiC) transistors may be ideal as they have superior characteristics over their silicon-based counterparts compared to these automotive applications, including higher operating temperature, speed, power efficiency, reduced loss and higher density power density.
SiC MOSFETs may improve charging efficiency and power density over silicon-based IGBTs when used in an OBC to convert AC from an electric grid into DC power for battery packs, making for more compact modules that reduce cooling system requirements, leading to reduced footprint.
Current automotive OEMs have formed partnerships with SiC manufacturers in order to incorporate its wide-bandgap material in their products. Partnerships range from long-term supply agreements and strategic and development partnerships, as well as co-investments in manufacturing facilities. Their dedication to the EV market reflects both its increasing urgency as a means of curbing emissions, as well as consumer interest for cleaner vehicles. Silicon carbide and other wide-bandgap materials have seen an unexpected market surge that is driving their use into an increasing share of automotive devices. Yet they must overcome barriers like price, manufacturing process maturity and availability of device designs tailored specifically for automobiles. Companies that can form early relationships with OEMs while simultaneously demonstrating device capabilities will be best-placed to capture future demand for electric cars.