Silicon Carbide Conference 2023

ABSTRACT: Power semiconductor devices built on silicon carbide (SiC) substrates offer significant energy savings and reduced system footprint for electric vehicle power electronics, providing longer driving range or reduced battery capacity to enable long drive distance.

This keynote examines industry commitment to using wide bandgap materials and silicon carbide power electronics to foster a more eco-friendly world.

Keynotes

Silicon carbide (SiC) has become the go-to power semiconductor material in EVs, power plants and transportation applications due to its superior physical properties. Yet device and package designers still face difficulty meeting customer demand with high performance, reliability and scalability requirements – an issue ICSCRM 2023 will explore together with experts from different fields.

This year’s keynotes will address the big-picture issues facing our industry: furthering UN Sustainable Development Goals and finding equitable economic opportunities for low-carbon technologies. They will also discuss global resource depletion challenges and how technology can be harnessed to mitigate pollution and carbon emissions.

SEMICON West 2023 will feature keynotes from executives across the electronics supply chain on topics including government investment in chip manufacturing, supply chain resilience and heterogeneous integration. Speakers will also address key challenges like reaching $1 trillion in chip sales and workforce development.

This conference will take place from 17-22 September 2023 in Sorrento, Italy and feature authoritative research papers presented as orals and posters. It serves as an important platform for scientists and engineers alike to share updates regarding recent advancements in wide bandgap semiconductors.

ST is proud to sponsor this event as an emeritus sponsor and will present both oral and poster presentations at this conference. Researchers will showcase their latest developments and progress in SiC MOSFET and power device technologies, such as high performance planar MOSFETs, ultrahigh breakdown voltage SiC diodes and the use of p-type GaN to further optimize MOSFET performance.

APCSCRM 2023 will promote new development and deep exchanges between Asia-Pacific wide bandgap semiconductor industry and academia, strengthen collaborative innovation and open cooperation, and lay a solid foundation for further prosperity of silicon carbide industry. This event will convene distinguished scientists, experts and leading enterprises from silicon carbide industry for showcase cutting edge wideband gap semiconductor technologies and application research.

CEA-Leti is contributing four presentations at ICSCRM that cover its full scope of activity. Two oral and two poster presentations will highlight different aspects of CEA-Leti’s activities; with one oral and three poster presentations. A poster presentation will outline CEA-Leti’s development of ion slicing techniques for applying SiC layers onto other substrates such as insulators – aiding device performance from power electronics through photonics to quantum technologies using SiC.

Tutorials

ICSCRM 2023 is an annual meeting designed to bring engineers, scientists, and students working on silicon carbide and related materials together for discussion and debate. The conference includes tutorials, invited and contributed talks as well as informal events meant to foster lively discourse and debate.

This conference covers an expansive spectrum of interface-related topics, spanning traditional silicon-based devices to emerging areas that lie beyond state-of-the-art. Wednesday tutorial lectures, invited and contributed talks are followed by informal events designed to stimulate lively discussion.

Attendees will have an unprecedented opportunity to gain knowledge from international leaders in wide bandgap semiconductor technology at this high-level event. Participants will share forward-looking industry perspectives, showcase advanced achievements of enterprises and build industry connections!

This tutorial provides essential technology concepts for practitioners of SiC. Topics covered will range from substrates and epitaxy, chip design and fabrication as well as efficient power electronic applications made possible with SiC.

These two-day seminars will take place October 11 and 12, 2022 and provide hands-on training on using the codes developed by MICCoM. Participants will become acquainted with methods and techniques for first principles calculations of material properties including heterogeneous materials, surfaces and interfaces.

This international conference brings together some of the leading researchers and experts in silicon carbide materials research and related materials science fields from all over the globe. Held annually since 1996 in Sorrento, Italy – known for its lemon trees and delicious limoncello production – it makes an ideal venue for this world-class event. Alongside keynote presentations and oral/poster technical sessions, Sorrento hosts full day tutorials, workshop on code development workshops, as well as Scientific Advisory Board meetings.

Industrial Talks

Industry talks aim to showcase and foster cooperation between enterprises involved in the wide bandgap semiconductor supply chain and to demonstrate their latest technological achievements. They typically feature projects roadshows, keynote speeches, panel discussions and oral reports delivered by industry experts and leading enterprises in this field of wide bandgap semiconductors.

Over the past decade, global semiconductor industry has experienced rapid expansion. 5G networks and next-generation telecom infrastructure has presented manufacturers with an opportunity to produce higher performance devices at lower costs by using wide bandgap semiconductors – however widespread adoption may be limited by lack of high reliability.

Silicon Carbide (SiC) is an advanced compound semiconductor with exceptional physical properties over silicon, boasting 10 times greater breakdown electric field strength and 3 times larger band gaps, making it the ideal replacement for traditional power semiconductors. SiC comes in various polytypes; 4H-SiC is the optimal option for high-voltage applications.

SiC devices have already proven themselves in key industries like electric vehicles and energy storage systems, and now ready to enter mass production to fulfill an electrified, sustainable future. Due to its high breakdown voltage, however, SiC requires advanced characterization methods in order to ensure its safety and reliability; this presentation will highlight an innovative solution for testing these devices without damaging them.

Industry talks will provide an update on recent advances in wide-bandgap technologies and their application in power electronics, RF devices and solar cells. Furthermore, they will examine current challenges to developing reliable yet cost-effective SiC devices while offering solutions to overcome such difficulties.

Posters

The International Silicon Carbide Carbide Resources Materials Conferences are the leading international technical discussions forum on silicon carbide (SiC) and related materials, featuring biannual events that cover all aspects of wide bandgap semiconductors from crystal growth to reliability in applications.

Research papers presented at ICSCRM showcase the latest advances in wide bandgap semiconductors, such as epitaxial SiC wafer production techniques, device designs tailored to high power/high frequency applications and advanced material properties.

Here is your opportunity to meet industry insiders and academic researchers alike – sharing their knowledge of SiC. Experts from every facet of supply chain will be present, including material scientists, equipment technologists, device designers, fab professionals, test and reliability engineers as well as test engineers – making this conference truly unparalleled in terms of SiC expertise!

Join those on the cutting edge of SiC technology as they discuss and discover any groundbreaking breakthroughs on the horizon. ICSCRM 2023 also provides a great opportunity for young researchers and students to share their work in poster sessions; one prize will be given out for best student poster presentation honoring Prof. Ed Nicollian, an industry pioneer who pioneered metal oxide semiconductor research. Looking forward to ICSCRM 2023? Join the conversation now and present your work there!