{"id":313,"date":"2024-05-04T06:26:49","date_gmt":"2024-05-03T22:26:49","guid":{"rendered":"https:\/\/2024yy.com\/?p=313"},"modified":"2024-05-04T06:26:49","modified_gmt":"2024-05-03T22:26:49","slug":"harness-the-unrivalled-efficiency-frequency-temperature-and-voltage-capabilities-of-silicon-carbide-power-modules","status":"publish","type":"post","link":"https:\/\/2024yy.com\/cs\/harness-the-unrivalled-efficiency-frequency-temperature-and-voltage-capabilities-of-silicon-carbide-power-modules\/","title":{"rendered":"Vyu\u017eit\u00ed bezkonkuren\u010dn\u00ed \u00fa\u010dinnosti, frekvence, teploty a nap\u011bt\u00ed nap\u00e1jec\u00edch modul\u016f z karbidu k\u0159em\u00edku"},"content":{"rendered":"

Vyu\u017eijte bezkonkuren\u010dn\u00ed \u00fa\u010dinnost, frekvenci, teplotu a nap\u011bt\u00ed karbidu k\u0159em\u00edku s moduly ACEPACK DRIVE navr\u017een\u00fdmi speci\u00e1ln\u011b pro vyu\u017eit\u00ed n\u00edzk\u00e9 hodnoty RDS(on) a omezen\u00fdch sp\u00ednac\u00edch ztr\u00e1t k zaji\u0161t\u011bn\u00ed vy\u0161\u0161\u00ed hustoty v\u00fdkonu, men\u0161\u00edch rozm\u011br\u016f a sn\u00ed\u017een\u00e9 pot\u0159eby chlazen\u00ed v trak\u010dn\u00edch m\u011bni\u010d\u00edch HEV\/EV.<\/p>\n

Mechanick\u00e9 vlastnosti SiC v\u0161ak mohou p\u0159i opakovan\u00e9m nam\u00e1h\u00e1n\u00ed omezit jeho schopnost cyklick\u00e9ho nap\u00e1jen\u00ed. To se projevuje zejm\u00e9na u p\u00e1jec\u00edch spoj\u016f mezi \u010dipem a substr\u00e1tem, kde opakovan\u00e9 nam\u00e1h\u00e1n\u00ed degraduje materi\u00e1l a zkracuje \u017eivotnost za\u0159\u00edzen\u00ed.<\/p>\n

SEMITOP E1\/E2<\/h2>\n

SEMITOP E1\/E2 je kompletn\u00ed \u0159e\u0161en\u00ed nap\u00e1jec\u00edho modulu postaven\u00e9 na nejmodern\u011bj\u0161\u00edch \u010dipov\u00fdch technologi\u00edch, kter\u00e9 konstrukt\u00e9r\u016fm umo\u017e\u0148uje dos\u00e1hnout optim\u00e1ln\u00ed \u00farovn\u011b v\u00fdkonu jejich n\u00e1vrh\u016f. Tato platforma modul\u016f je ide\u00e1ln\u00ed pro aplikace s n\u00edzk\u00fdm a st\u0159edn\u00edm rozsahem v\u00fdkonu a\u017e do 70 kW, d\u00edky kompaktn\u00edmu proveden\u00ed s n\u00edzkou induk\u010dnost\u00ed a \u010dipov\u00fdm technologi\u00edm je ide\u00e1ln\u00ed pro UPS, sol\u00e1rn\u00ed syst\u00e9my (v\u010detn\u011b sb\u011brnice a\u017e 1500 VDC pro \u0159e\u0161en\u00ed stringov\u00fdch st\u0159\u00edda\u010d\u016f), motorov\u00e9 pohony\/zdroje nap\u00e1jen\u00ed a tak\u00e9 pro nov\u011b vznikaj\u00edc\u00ed trhy nab\u00edje\u010dek bateri\u00ed pro elektromobily.<\/p>\n

Technologie GaN HEMT p\u0159edstavuje p\u016fsobivou alternativu ke konven\u010dn\u011bj\u0161\u00edm technologi\u00edm, pokud jde o \u00fa\u010dinnost a spolehlivost, a m\u016f\u017ee se pochlubit v\u00fdrazn\u011b lep\u0161\u00ed \u00fa\u010dinnost\u00ed p\u0159em\u011bny energie, lep\u0161\u00edm \u00fatlumem EMI, vy\u0161\u0161\u00ed sp\u00ednac\u00ed frekvenc\u00ed, sn\u00ed\u017eenou hysterez\u00ed a tak\u00e9 sn\u00ed\u017een\u00fdmi sp\u00ednac\u00edmi ztr\u00e1tami, kter\u00e9 zvy\u0161uj\u00ed hustotu v\u00fdkonu.<\/p>\n

V\u00fdkonov\u00e9 moduly SEMITOP E1 a E2 IGBT 7. generace byly prvn\u00ed IGBT navr\u017een\u00e9 speci\u00e1ln\u011b pro konven\u010dn\u00ed topologie pohon\u016f, jako jsou pohony CIB, sixpack a halfbridge. Jejich kompaktn\u00ed rozm\u011bry, flexibiln\u00ed architektura a pln\u00e1 kompatibilita se standardn\u00edmi pr\u016fmyslov\u00fdmi bal\u00ed\u010dky z nich \u010din\u00ed vynikaj\u00edc\u00ed nab\u00eddku hodnoty s ohledem na n\u00e1klady a v\u00fdkon. Jejich platforma zahrnuje moduly o v\u00fd\u0161ce 12 mm bez z\u00e1kladn\u00ed desky se dv\u011bma bo\u010dn\u00edmi mont\u00e1\u017en\u00edmi \u0161rouby ve spojen\u00ed s filozofi\u00ed bezp\u00e1jkov\u00e9 m\u0159\u00ed\u017eky pro snadn\u011bj\u0161\u00ed p\u0159ipojen\u00ed na desku plo\u0161n\u00fdch spoj\u016f; nav\u00edc jejich kombinace v\u00fdkonov\u00e9ho sp\u00edna\u010de GaN HEMT v kombinaci s vysoce v\u00fdkonn\u00fdm IGBT zaji\u0161\u0165uje bezpe\u010dnost dodavatelsk\u00e9ho \u0159et\u011bzce pro aplikace vy\u017eaduj\u00edc\u00ed vysok\u00fd v\u00fdkon za konkurenceschopnou cenu.<\/p>\n

HM<\/h2>\n

Polovodi\u010de SiC se vyzna\u010duj\u00ed t\u0159ikr\u00e1t vy\u0161\u0161\u00ed tepelnou vodivost\u00ed ne\u017e k\u0159em\u00edk, co\u017e zaji\u0161\u0165uje mnohem ni\u017e\u0161\u00ed sp\u00ednac\u00ed ztr\u00e1ty a vy\u0161\u0161\u00ed hustotu v\u00fdkonu p\u0159i men\u0161\u00edch rozm\u011brech a chladn\u011bj\u0161\u00edch m\u011bni\u010d\u00edch pro ti\u0161\u0161\u00ed a energeticky \u00fa\u010dinn\u011bj\u0161\u00ed pohony pr\u016fmyslov\u00fdch motor\u016f, l\u00e9ka\u0159sk\u00fdch za\u0159\u00edzen\u00ed, leteck\u00fdch syst\u00e9m\u016f a trak\u010dn\u00edch pohon\u016f.<\/p>\n

Platforma HM nab\u00edz\u00ed \u0161irok\u00fd v\u00fdb\u011br 62mm modul\u016f vhodn\u00fdch pro topologie s tvrd\u00fdm sp\u00edn\u00e1n\u00edm, jako jsou LLC a ZVS, s inteligentn\u00edmi ovlada\u010di hradel zalo\u017een\u00fdmi na \u010dipov\u00e9 sad\u011b CISSOID HADES2, kter\u00e9 pln\u011b vyu\u017e\u00edvaj\u00ed n\u00edzk\u00e9 sp\u00ednac\u00ed ztr\u00e1ty technologie SiC a provoz p\u0159i vysok\u00fdch teplot\u00e1ch a\u017e do 175 stup\u0148\u016f Celsia.<\/p>\n

Spole\u010dnost ROHM nab\u00edz\u00ed vysoce v\u00fdkonn\u00e1 SiC nap\u00e1jec\u00ed \u0159e\u0161en\u00ed vyu\u017e\u00edvaj\u00edc\u00ed standardn\u00ed pouzdra s pokro\u010dil\u00fdmi obalov\u00fdmi technologiemi, kter\u00e1 se vyzna\u010duj\u00ed n\u00edzkou komuta\u010dn\u00ed induk\u010dnost\u00ed modulu pot\u0159ebnou pro vy\u0161\u0161\u00ed sp\u00ednac\u00ed frekvence a sn\u00ed\u017een\u00edm po\u010dtu magnetick\u00fdch filtra\u010dn\u00edch komponent, co\u017e vede k efektivn\u00ed konverzi energie a sn\u00ed\u017een\u00ed celkov\u00fdch n\u00e1klad\u016f na syst\u00e9m.<\/p>\n

Moduly \u0159ady HM se vyzna\u010duj\u00ed vysok\u00fdm teplotn\u00edm koeficientem RDS(on), kter\u00fd minimalizuje ztr\u00e1ty v\u00fdkonu, tak\u017ee jsou vhodn\u00e9 pro aplikace vy\u017eaduj\u00edc\u00ed vysokou spolehlivost, jako jsou automobilov\u00e9 a pr\u016fmyslov\u00e9 m\u011bni\u010de. D\u00edky sv\u00e9 odolnosti jsou tak\u00e9 vhodn\u00e9 pro pou\u017eit\u00ed v hybridn\u00edch vozidlech, proto\u017ee zvl\u00e1dnou v\u011bt\u0161\u00ed proud ne\u017e za\u0159\u00edzen\u00ed na b\u00e1zi k\u0159em\u00edku a z\u00e1rove\u0148 pracuj\u00ed p\u0159i vy\u0161\u0161\u00edch teplot\u00e1ch, co\u017e sni\u017euje celkovou velikost a hmotnost m\u011bni\u010d\u016f.<\/p>\n

ACEPACK DRIVE<\/h2>\n

Nap\u00e1jec\u00ed moduly ACEPACK DRIVE od spole\u010dnosti ST vyu\u017e\u00edvaj\u00ed nejmodern\u011bj\u0161\u00ed v\u00fdkonov\u00e9 tranzistory SiC MOSFET druh\u00e9 a t\u0159et\u00ed generace v kompaktn\u00ed topologii sixpack navr\u017een\u00e9 speci\u00e1ln\u011b pro trak\u010dn\u00ed m\u011bni\u010de elektromobil\u016f s vysokou \u00fa\u010dinnost\u00ed. Vyu\u017eit\u00ed obal\u016f z p\u0159\u00edmo v\u00e1zan\u00e9 m\u011bdi (DBC) z nitridu hlin\u00edku zaji\u0161\u0165uje vy\u0161\u0161\u00ed tepelnou vodivost. Symetrick\u00e9 rozlo\u017een\u00ed v\u00fdvod\u016f mezi sp\u00edna\u010di na horn\u00ed a doln\u00ed stran\u011b eliminuje chyby p\u0159i mont\u00e1\u017ei d\u00edky syst\u00e9mu poka-yoke s v\u00fdvody X a Y, kter\u00fd zaji\u0161\u0165uje spr\u00e1vn\u00e9 zarovn\u00e1n\u00ed s \u0159\u00eddic\u00edmi deskami.<\/p>\n

Moduly ACEPACK DRIVE, nap\u00e1jen\u00e9 v\u00fdkonov\u00fdmi tranzistory STPOWER SiC t\u0159et\u00ed generace, dosahuj\u00ed nejlep\u0161\u00edch hodnot v oboru na z\u00e1klad\u011b RDS(on) na plochu matrice a omezen\u00fdch sp\u00ednac\u00edch ztr\u00e1t. Krom\u011b toho se mohou pochlubit vynikaj\u00edc\u00edm v\u00fdkonem p\u0159i provozu v re\u017eimu synchronn\u00ed rektifikace, co\u017e pom\u00e1h\u00e1 zkracovat nab\u00edjec\u00ed cykly a z\u00e1rove\u0148 prodlu\u017eovat dojezd elektromobil\u016f.<\/p>\n

Tyto moduly vyu\u017e\u00edvaj\u00ed technologii sp\u00e9k\u00e1n\u00ed a vytv\u00e1\u0159ej\u00ed spolehliv\u00e9 balen\u00ed, kter\u00e9 v\u00fdrobci snadno integruj\u00ed do pohon\u016f elektrick\u00fdch vozidel. K dispozici jsou moduly s r\u016fzn\u00fdmi jmenovit\u00fdmi v\u00fdkony, kter\u00e9 vyhovuj\u00ed pot\u0159eb\u00e1m provozn\u00edho nap\u011bt\u00ed m\u011bni\u010d\u016f. 1200V baterie ADP280120W3, ADP360120W3 a ADP480120W3 jsou nyn\u00ed v pln\u00e9 v\u00fdrob\u011b, zat\u00edmco 750V verze (ADP46075W3 a ADP61075W3) by m\u011bly b\u00fdt k dispozici do b\u0159ezna 2023. Tyto moduly nab\u00edzej\u00ed snadn\u00e9 \u0159e\u0161en\u00ed plug-and-play pro trak\u010dn\u00ed m\u011bni\u010de elektromobil\u016f kompatibiln\u00ed s p\u0159\u00edm\u00fdm kapalinov\u00fdm chlazen\u00edm, s v\u00fdvodov\u00fdmi \u017eebry pro \u00fa\u010dinn\u00fd odvod tepla. Pro simulaci jejich tepeln\u00e9ho chov\u00e1n\u00ed byl vytvo\u0159en 3D tepeln\u00fd model kone\u010dn\u00fdch prvk\u016f (FEM) z\u00e1visl\u00fd na \u010dase, kter\u00fd byl ov\u011b\u0159en na z\u00e1klad\u011b experiment\u00e1ln\u00edch dat s p\u0159ihl\u00e9dnut\u00edm k tepeln\u00e9 vodivosti p\u00e1jec\u00edch vrstev v z\u00e1vislosti na teplot\u011b a potvrzen jako p\u0159esn\u00fd.<\/p>","protected":false},"excerpt":{"rendered":"

Vyu\u017eijte bezkonkuren\u010dn\u00ed \u00fa\u010dinnost, frekvenci, teplotu a nap\u011bt\u00ed karbidu k\u0159em\u00edku s moduly ACEPACK DRIVE navr\u017een\u00fdmi speci\u00e1ln\u011b pro vyu\u017eit\u00ed n\u00edzk\u00e9 hodnoty RDS(on) a omezen\u00fdch sp\u00ednac\u00edch ztr\u00e1t k zaji\u0161t\u011bn\u00ed vy\u0161\u0161\u00ed hustoty v\u00fdkonu, men\u0161\u00edch rozm\u011br\u016f a sn\u00ed\u017een\u00e9 pot\u0159eby chlazen\u00ed v trak\u010dn\u00edch m\u011bni\u010d\u00edch HEV\/EV. Mechanick\u00e9 vlastnosti SiC v\u0161ak mohou br\u00e1nit jeho schopnostem cyklov\u00e1n\u00ed v\u00fdkonu, pokud je vystaven ...<\/p>\n

Vyu\u017eit\u00ed bezkonkuren\u010dn\u00ed \u00fa\u010dinnosti, frekvence, teploty a nap\u011bt\u00ed nap\u00e1jec\u00edch modul\u016f z karbidu k\u0159em\u00edku<\/span> Pokra\u010dovat ve \u010dten\u00ed \"<\/a><\/p>","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"","footnotes":""},"categories":[2],"tags":[],"class_list":["post-313","post","type-post","status-publish","format-standard","hentry","category-product-related"],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/2024yy.com\/cs\/wp-json\/wp\/v2\/posts\/313","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/2024yy.com\/cs\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/2024yy.com\/cs\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/2024yy.com\/cs\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/2024yy.com\/cs\/wp-json\/wp\/v2\/comments?post=313"}],"version-history":[{"count":1,"href":"https:\/\/2024yy.com\/cs\/wp-json\/wp\/v2\/posts\/313\/revisions"}],"predecessor-version":[{"id":314,"href":"https:\/\/2024yy.com\/cs\/wp-json\/wp\/v2\/posts\/313\/revisions\/314"}],"wp:attachment":[{"href":"https:\/\/2024yy.com\/cs\/wp-json\/wp\/v2\/media?parent=313"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/2024yy.com\/cs\/wp-json\/wp\/v2\/categories?post=313"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/2024yy.com\/cs\/wp-json\/wp\/v2\/tags?post=313"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}